Semiconductor structures using high-dielectric-constant materials and an adhesion layer
First Claim
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1. A semiconductor device formed outwardly from an outer surface of a semiconductor substrate, comprising:
- an active region disposed proximate the outer surface of the substrate;
a conductive plug electrically connected to the active region;
an interlevel isolation layer disposed adjacent the outer surface of the semiconductor substrate and surrounding the conductive plug;
an inner electrode electrically coupled to the conductive plug and disposed proximate portions of an outer surface of the interlevel isolation layer; and
an adhesion layer overlying the conductive plug and disposed between the interlevel isolation layer and the inner electrode, the adhesion layer comprising at least partially oxidized titanium and having a thickness in the range of 2 to 100 angstroms, the adhesion layer operating to cause adhesion between the material comprising the interlevel isolation layer and the material comprising the inner electrode.
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Abstract
A semiconductor device (10) is illustrated, which is formed on an active region (14) of a semiconductor substrate (12). Device (10) comprises a conductive plug (20) and a barrier layer (22) formed in an opening in an interlevel isolation layer (18). An inner electrode (24) is caused to adhere to the interlevel isolation layer (18) through the use of an adhesion layer (26). High-dielectric-constant layer (28) and an outer electrode (30) are formed outwardly from inner electrode (24).
111 Citations
20 Claims
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1. A semiconductor device formed outwardly from an outer surface of a semiconductor substrate, comprising:
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an active region disposed proximate the outer surface of the substrate; a conductive plug electrically connected to the active region; an interlevel isolation layer disposed adjacent the outer surface of the semiconductor substrate and surrounding the conductive plug; an inner electrode electrically coupled to the conductive plug and disposed proximate portions of an outer surface of the interlevel isolation layer; and an adhesion layer overlying the conductive plug and disposed between the interlevel isolation layer and the inner electrode, the adhesion layer comprising at least partially oxidized titanium and having a thickness in the range of 2 to 100 angstroms, the adhesion layer operating to cause adhesion between the material comprising the interlevel isolation layer and the material comprising the inner electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 17, 18, 19)
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10. A semiconductor device formed outwardly from an outer surface of a semiconductor substrate, comprising:
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an active region disposed proximate the outer surface of the substrate; a conductive plug electrically connected to the active region; an interlevel isolation layer disposed adjacent the outer surface of the semiconductor substrate and surrounding the conductive plug; an inner electrode electrically coupled to the conductive plug and disposed proximate portions of an outer surface of the interlevel isolation layer; an adhesion layer overlying the conductive plug and disposed between the interlevel isolation layer and the inner electrode, the adhesion layer comprising at least partially oxidized titanium and having a thickness in the range of 2 to 100 angstroms, the adhesion layer causing adhesion between the material comprising the interlevel isolation layer and the material comprising the inner electrode; a barrier layer disposed between the adhesion layer and the inner electrode, the barrier layer operating to separate the material contained in the inner electrode from the material contained in the conductive plug; and a sidewall isolation ting surrounding the barrier layer and separating the edges of the barrier layer from the inner electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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20. A semiconductor device formed outwardly from an outer surface of a semiconductor substrate, comprising:
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an active region disposed proximate the outer surface of the substrate; a conductive plug electrically connected to the active region; an interlevel isolation layer disposed adjacent the outer surface of the semiconductor substrate and surrounding the conductive plug; an inner electrode electrically coupled to the conductive plug and disposed proximate portions of an outer surface of the interlevel isolation layer; and an adhesion layer overlying the conductive plug and disposed between the interlevel isolation layer and the inner electrode, the adhesion layer having a thickness in the range of 5 to 10 angstroms, the adhesion layer operating to cause adhesion between the material comprising the interlevel isolation layer and the material comprising the inner electrode.
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Specification