Semiconductor integrated circuit which prevents malfunctions caused by noise

• US 5,612,643 A
• Filed: 03/20/1996
• Issued: 03/18/1997
• Est. Priority Date: 03/30/1994
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Hirayama, Takeshi
• Primary Examiner(s): CUNNINGHAM, TERRY D
• Application Number:
  US08/618,730
• Time in Patent Office: 363 Days
• Field of Search: 327/50, 327/77, 327/78, 327/143, 327/198, 327/534, 327/545, 327/564
• US Class Current: 327/534
• CPC Class Codes: G06F 11/00 Error detection; Error correction; Monitoring error detection, correction or monitoring in information storage based on relative movement between record carrier and transducer G11B20/18; monitoring, i.e. supervising the progress of recording or reproducing G11B27/36; in static stores G11C29/00
• CPC Class Codes: H01L 27/0222 Charge pumping, substrate bias generation structures
• CPC Class Codes: H03K 19/0027 in field effect transistor circuits
• CPC Class Codes: H03K 19/00361 in field effect transistor circuits
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET

Abstract

In a semiconductor integrated circuit device, a MOS transistor has a relatively high built-in threshold, and in operation, a substrate bias is applied to the MOS transistor so as to cause the MOS transistor to forcibly have a reduced threshold, so that the MOS transistor operates at a high speed with the reduced threshold. When noise is detected, application of the substrate bias is stopped so that the MOS transistor restores the relatively high built-in threshold, and simultaneously, the MOS transistor is put in a standby condition, so that a malfunction can be prevented with the relatively high built-in threshold.

Claims

1. A semiconductor integrated circuit device, comprising:

a least one MOS transistor having a variable threshold voltage;

a substrate biasing means for applying a predetermined substrate bias to said transistor during an operational period of said device;

a noise detecting means coupled to one of a ground line, a circuit external to said integrated circuit device, and a supply voltage line, for producing a noise detection signal upon detection of noise on said one of said ground line, said circuit external to said integrated circuit device, and said supply voltage line in excess of a predetermined noise level; and

a control means, responsive to said noise detection signal to stop said substrate biasing means from applying said predetermined bias to said transistor;

wherein the presence of said noise detection signal substantially defines a standby period for said device, and the absence of said noise detection signal substantially defines said operational period of said device;

wherein said substrate biasing means substantially does not consume power during said standby period.

2. A semiconductor integrated circuit device as claimed in claim 1, wherein:

said MOS transistor is of an N-channel type, and

said substrate biasing means applies a predetermined positive substrate bias to said N-channel MOS transistor during operation.

3. A semiconductor integrated circuit device as claimed in claim 1, wherein:

the semiconductor integrated circuit device is of a CMOS type including at least one N-channel MOS transistor formed in a P-well and at least one P-channel MOS transistor formed in a N-well, and

said substrate biasing means applies a first predetermined voltage to said P-well so as to positively bias said P-well, and a second predetermined voltage to said N-well so as to negatively bias said N-well.

5. A semiconductor integrated circuit device according to claim 1, wherein:

said transistor has a relatively high built-in threshold voltage;

said substrate biasing means applies said predetermined bias to said transistor during operation so that said transistor has a threshold lower than said built-in threshold, whereby said transistor can operate at a high speed; and

said control means restores said built-in threshold in response to said noise detection signal.

4. A semiconductor integrated circuit device comprising:

at least one MOS transistor disposed on a substrate, and having a variable threshold voltage;

a substrate biasing means for causing said substrate to be biased at one of a first predetermined bias and a second predetermined bias;

a noise detecting means coupled to one of a ground line, a circuit external to said integrated circuit device, and a supply voltage line, for producing a noise detection signal upon detection of noise in excess of a predetermined level on said one of said ground line, said circuit external to said integrated circuit device, and supply voltage line; and

a control means for controlling said substrate biasing means to select one of said first and said second predetermined bias;

wherein said control means controls said substrate biasing means to cause said substrate to have said first predetermined bias in the presence of said noise detection signal, and to have said second predetermined bias in the absence of said noise detection signal, the is presence of said noise detection signal substantially defining a standby period of said device;

wherein said transistor assumes a first threshold voltage when said substrate has said first predetermined bias, and assumes a second threshold voltage when said substrate has said second predetermined bias;

wherein the magnitude of said first threshold voltage is greater than the magnitude of said second threshold voltage; and

wherein said substrate biasing means substantially does not consume electric power during said standby period.

6. A semiconductor integrated circuit device having an operational mode and a standby mode, said device comprising:

a substrate;

a MOS transistor having a variable threshold voltage, including a first threshold voltage and a second threshold voltage, said transistor being disposed on said substrate, said first threshold voltage being greater in magnitude than said second threshold voltage;

a substrate biasing circuit biasing said substrate at one of a first predetermined bias and a second predetermined bias, said first predetermined bias causing said transistor to have said first threshold voltage, and said second predetermined bias causing said transistor to have said second threshold voltage, said first and said second threshold voltage being non-zero;

a clock generator for providing a control clock output signal to said device;

a comparator for providing a comparator output signal to said substrate biasing circuit and said clock generator; and

a noise level detecting circuit coupled to one of a ground line, a circuit external to said integrated circuit device, and a supply voltage line, and providing a noise detection signal to said comparator upon detection of noise in excess of a predetermined level on said one of said ground line, said circuit external to said integrated circuit device, and said supply voltage line;

wherein said noise detection signal determines said standby mode of said device, and an absence of said noise detection signal determines said operational mode of said device;

wherein said comparator produces said comparator output signal in response to said noise detection signal;

wherein said clock generator is responsive to said comparator output signal to stop producing said control clock output signal; and

wherein said substrate biasing circuit biases said substrate at said first predetermined bias in response to said comparator output signal, and biases said substrate at said second predetermined bias in the absence of said comparator output signal;

whereby when said device is in said standby mode, said transistor has said first threshold voltage, said substrate biasing circuit substantially does not consume electric power, and said clock generator does not produce said control clock output signal, and when said device is in said operational mode, said transistor has said second threshold voltage and said clock generator does produce said control clock output signal.

7. The device as set forth in claim 6, wherein said transistor is an N-channel MOS transistor, said first threshold voltage is 0.7 V, and said second threshold voltage is 0.4 V.

8. The device as set forth in claim 6, wherein said transistor is a P-channel MOS transistor, said first threshold voltage is -0.7 V, and said second threshold voltage is -0.4 V.

9. A semiconductor integrated circuit device with an operational period and a standby period, comprising:

a noise detector coupled to one of a ground line, a circuit external to said integrated circuit device, and a supply voltage line, for producing a noise detection signal upon detection of noise on said one of said ground line, said circuit external to said integrated circuit device, and said supply voltage line in excess of a predetermined noise level;

a control circuit, responsive to said noise detection signal, for determining said operational period and said standby period;

transistors, including an N-channel MOS transistor disposed in a P-well of a substrate, and a P-channel MOS transistor disposed in an N-well of said substrate; and

a biasing circuit coupled with said N-well and said P-well;

wherein each of said transistors has a respective first threshold voltage and a respective second threshold voltage, said respective first threshold voltage of said N-channel MOS transistor being greater than said respective second threshold voltage thereof, and said respective first threshold voltage of said P-channel MOS transistor being less than said respective second threshold voltage thereof, said first and said second threshold voltage each being non-zero;

wherein, during said operational period, said biasing circuit biases said N-well and said P-well by expending electric power so that said N-channel and said P-channel MOS transistors have said respective second threshold voltage;

wherein, during said standby period, said biasing circuit substantially does not expend electric power to bias said N-well and said P-well thereby causing said N-channel and said P-channel MOS transistors to have said respective first threshold voltage.

10. The device as set forth in claim 9, wherein:

said first threshold voltage of said N-channel MOS transistor is 0.7 V, and said second threshold voltage thereof is 0.4 V; and

said first threshold voltage of said P-channel MOS transistor is -0.7 V, and said second threshold voltage thereof is -0.4 V.