Endcap reservoir to reduce electromigration

• US 5,614,764 A
• Filed: 01/13/1995
• Issued: 03/25/1997
• Est. Priority Date: 01/13/1995
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Baerg, Bill, Crandall, Robert L.
• Primary Examiner(s): WHITEHEAD JR, CARL W
• Application Number:
  US08/372,441
• Time in Patent Office: 802 Days
• Field of Search: 257/666, 257/690, 257/691, 257/692, 257/734, 257/763, 257/765, 257/767, 257/774
• US Class Current: 257/767
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An endcap reservoir for extending electromigration lifetime and preventing harmful void formation that causes electromigration failure in interconnect lines. When a current is introduced into an interconnect line the current can drag metal atoms from behind the current flow down the interconnect line, leaving behind voids. Voids are regions of the interconnect line that no longer contain metal atoms. If a void grows to the entire width of the interconnect line it stops the current from flowing in the interconnect line and forces the current to flow in the shunt layer. Current flowing in the shunt layer raises the resistance of the interconnect line and can cause the interconnect line to suffer electromigration failure. The present invention, an endcap reservoir, is an extension of the interconnect line added at the upstream end of the interconnect line. The endcap reservoir functions as an additional supply of metal atoms so that voids will form behind the current flow and will not stop the current from flowing in the interconnect line. The additional atoms in the endcap reservoir are sufficient in number to allow the build up of a large backpressure at the downstream end of the interconnect line. The backpressure prevents the further migration of metal atoms downstream and stops void formation before the current is diverted into the shunt layer and consequently before electromigration failure can occur.

Claims

1. An interconnect structure in a semiconductor device comprising:

an interconnect line having a first end and a second end,

at least one via coupled to said interconnect line, and

an endcap reservoir coupled to said first end of said interconnect line.

2. The interconnect structure as described in claim 1 wherein said interconnect structure further comprises a shunt layer in parallel with and connected to said interconnect line.

3. The interconnect structure as described in claim 2 wherein said shunt layer is selected from the group comprising:

titanium and titanium nitride.

4. The interconnect structure as described in claim 1 wherein said interconnect line and said endcap reservoir comprise the same type of metal.

5. The interconnect structure as described in claim 4 wherein said interconnect line and said endcap reservoir comprise an aluminum/0.5% copper metal.

6. The interconnect structure as described in claim 1 wherein said interconnect line and said endcap reservoir have approximately the same thickness and width.

7. The interconnect structure as described in claim 1 wherein said via comprises tungsten.

8. The interconnect structure as described in claim 1 wherein a current is introduced into said interconnect line through said via and wherein said current flows from said via to said second end of said interconnect line.

9. The interconnect structure as described in claim 8 wherein said current pulls metal atoms from said endcap reservoir to said second end of said interconnect line.

10. The interconnect structure as described in claim 9 wherein said endcap reservoir comprises a sufficient number of metal atoms such that a backpressure is built up at said second end of said interconnect line;

said backpressure causing said inteconnect line to reach a steady-state.

11. An interconnect structure in a semiconductor device comprising:

an interconnect line having a first end and a second end;

at least one via coupled to said interconnect line;

a shunt layer, wherein said shunt layer is parallel with and coupled to said interconnect line; and

an endcap reservoir coupled to said first end of said interconnect line.

12. The interconnect structure as described in claim 11 wherein the ratio of the length of said endcap reservoir, I_R, to the length of said interconnect line, I_m, is ##EQU4## wherein λ

is the wave pattern of the stresses along said interconnect line, I_c is the threshold current, μ

_e is the electron mobility, K is the modulus of compression, W is the void width, μ

is the difference in the thermal coefficients of expansion between the dielectric and the metal, α

T is the difference in temperature between the dielectric deposition and the operating condition, and t_m is the thickness of said interconnect line.

13. An interconnect structure in a semiconductor device for preventing destructive void formation, said interconnect structure comprising:

an interconnect line comprising a first metal, said interconnect line having an interconnect thickness t_m, an interconnect length I_m, and an interconnect width W;

at least one via coupled to a surface of said interconnect line;

a reservoir of metal atoms comprising a second metal, said reservoir coupled to said interconnect line, and said reservoir having a reservoir thickness t_R, a reservoir length I_R, and a reservoir width W.

14. The interconnect structure as described in claim 13 wherein said interconnect structure further comprises a shunt layer, wherein said shunt layer runs parallel with and is connected to said interconnect line.

15. The interconnect structure as described in claim 14 wherein said shunt layer is selected from the group comprising:

titanium and titanium nitride.

16. The interconnect structure as described in claim 13 wherein said first metal of said interconnect line and said second metal of said reservoir comprise the same type of metal.

17. The interconnect structure as described in claim 16 wherein said first metal of said interconnect line and said second metal of said reservoir comprise an aluminum/0.5% copper metal.

18. The interconnect structure as described in claim 13 wherein said reservoir has approximately the same width and thickness as said interconnect line.

19. The interconnect structure as described in claim 13 wherein said reservoir is coupled to an end of said interconnect line, wherein a current is supplied to said interconnect line through said via, and wherein said current flows through said interconnect line in a direction opposite said reservoir such that said reservoir is upstream of said via.

20. The interconnect structure as described in claim 19 wherein said current pulls metal atoms from said reservoir to an end of said interconnect line opposite said reservoir and downstream of said via.

21. The interconnect structure as described in claim 20 wherein said reservoir comprises a sufficient number of metal atoms such that a backpressure is exerted from said end of said interconnect line opposite said reservoir;

said backpressure causing said interconnect line to reach a steady-state.