Use of multiple anodes in a magnetron for improving the uniformity of its plasma

• US 5,616,225 A
• Filed: 03/23/1994
• Issued: 04/01/1997
• Est. Priority Date: 03/23/1994
• Status: Expired due to Fees

• Current Assignee: Von Ardenne Anlagentechnik GmbH
• Original Assignee: BOC Group Pty Limited (Linde Plc)
• Inventors: Schulz, Stephen C., Newcomb, Richard, Sieck, Peter A., Trumbly, Terry A.
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US08/216,633
• Time in Patent Office: 1,105 Days
• Field of Search: 204/298.03, 204/298.06, 204/298.08, 204/298.11, 204/298.14, 204/298.21, 204/298.22, 204/298.24, 204/298.28, 204/192.12 , 204/192.13, 204/298.19, 204/192.22
• US Class Current: 204/298.14
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01J 37/3405 Magnetron sputtering
• CPC Class Codes: H01J 37/3426 Material
• CPC Class Codes: H01J 37/3438 Electrodes other than cathode
• CPC Class Codes: H01J 37/3444 Associated circuits
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures

Abstract

In one group of embodiments, two or more small anodes are spaced apart from one another in a magnetron, with some aspect of their electrical power being individually controlled in a manner to control a density profile across a plasma. In another group of embodiments, the same effect is obtained by mechanically moving one or more small anodes or anode masks. When used in a magnetron having either a rotating cylindrical cathode or a stationary planar cathode and designed to sputter films of material onto a substrate, the uniformity of the rate of deposition across the substrate is improved. Also, adverse effects of sputtering dielectric materials are reduced.

Claims

1. Apparatus within a vacuum chamber for applying a thin film of a material onto a substrate that is being moved in a path therethrough, comprising:

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversely across said substrate path;

including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including at least one anode disposed adjacent the target surface, connected to a positive voltage from a power source, and having a dimension in a direction of the target surface elongated axis of eight centimeters or less.

2. Apparatus within a vacuum chamber for sputtering a thin film of a material onto a substrate that is being moved in a path therethrough, comprising:

.

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversely across said substrate path, including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including at least one anode disposed adjacent the target surface and connected to a positive voltage from a power source and means for physically moving said at least one anode in a direction of said target surface elongated axis.

3. Apparatus within a vacuum chamber for sputtering a thin film of a material onto a substrate that is being moved in a path therethrough, comprising:

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversely across said substrate path, including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including at least one anode disposed adjacent the target surface and connecting to a positive voltage from a power source, at least one shutter positioned to shield said at least one anode, and means responsive to a control signal for adjusting an amount of said anode that is covered by said shutter.

4. Apparatus within a vacuum chamber for sputtering a thin film of a material onto a substrate that is being moved in a path therethrough, comprising:

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversly across said substrate path, including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including at least one anode disposed adjacent the target surface and connected to a positive voltage from a power source, a mask positioned over said at least on anode, said mask having an aperture therein that is significantly smaller in a direction of said target surface elongated axis than a dimension of said anode in said direction, and means responsive to a control signal for physically moving said mask and aperture across said at least one anode in the direction of said target surface elongated axis.

5. Apparatus within a vacuum chamber for sputtering a thin film onto a substrate that is being moved in a path therethrough, comprising:

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversely across said substrate path, including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including two or more separate anodes disposed adjacent the target surface, fixedly positioned apart from each other in a direction of said target surface elongated axis, and connected to a positive voltage from a power source, and means responsive to control signals for physically covering each of the two or ore separate anodes in time sequence so that only one anode is exposed at substantially all times.

6. Apparatus within a vacuum chamber for sputtering a thin film of a material onto a substrate that is being moved in a path therethrough, comprising:

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversly across said substrate path, including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including two or more separate anodes disposed adjacent the target surface, fixedly positioned apart from each other in a direction of said target surface elongated axis, and connected to a positive voltage from a power source, and means for separately controlling power applied to the individual anodes which interconnect said anodes with said power source, said separate power controlling means including means for sequentially connecting individual ones of said two or more anodes to the power source so that only one anode is so connected at substantially all times.

7. Apparatus of claim 6 wherein said separate power controlling means includes means for adjusting the relative times that each of said two or more anodes are connected to the power source.

8. Apparatus of claim 6 wherein said separate power controlling means includes means for alternately connecting each of said two or more anodes to the power source at a rate sufficient for each of said anodes to be so connected at least five times while a given location of the substrate is passing through the deposition zone.

9. Apparatus within a vacuum chamber for sputtering a thin film of a material onto a substrate that is being moved in a path therethrough, comprising:

a cylindrically shaped target that is rotatable about an elongated axis thereof which is oriented to extend transversely across said substrate path, including magnets therein facing said path, said target having a surface which is maintained at a negative voltage, thereby defining a deposition zone between the target and substrate path that extends along a length of the cylindrical target, and

means for adjusting a profile across said deposition zone of a rate of deposition of the material onto the substrate, said deposition rate profile adjusting means including two or more separate anodes disposed adjacent the target surface, fixedly positioned apart from each other in a direction of said target surface elongated axis, and connected to a positive voltage from a power source, and means for separately adjusting an electrical current through individual ones of said two or more anodes to maintain a selected level of electrical current through each one of said two or more anodes, wherein said electrical current adjusting means includes an adjustable shutter adjacent a surface of each of said two or more anodes.

10. Apparatus within a vacuum chamber, comprising:

a cathode,

at least two anodes spaced apart from each other and held fixed with respect to the cathode,

a source of gas introduced into the chamber sufficient to support a plasma therewithin, and

means for operating said at least two anodes sequentially in time.

11. Apparatus of claim 10, wherein said operating means includes means for altering the relative times of operation of individual ones of said at least two anodes.

15. The apparatus of claim 10 further comprising a magnet structure that forms a magnetron for sputtering a thin film of material onto a substrate being moved in a path through a vacuum chamber, wherein the cathode has a target surface that is symmetrical about an elongated axis thereof which is oriented to extend transversely across said substrate path, and the anodes are spaced apart in a direction of said target surface elongated axis.

16. The apparatus of claim 15, wherein the target surface is a cylindrically shaped surface that is rotatable about the elongated axis thereof.

17. The apparatus of claim 15 wherein the target surface is a planar surface.

18. The apparatus of claim 15 wherein said operating means includes means for altering relative times of operation of individual ones of said at least two anodes.

19. The apparatus of claim 15 further comprising means for separately adjusting electrical current through individual ones of said two or more anodes.

20. The apparatus of claim 15 further comprising means for inserting the gas in controlled amounts adjacent individual ones of said at least two anodes.

21. The apparatus of claim 15 wherein the target surface is a metal and the gas a reactive gas capable of combining with the metal to form a dielectric film on the substrate.

22. The apparatus of claim 16, wherein the target surface is a metal and the gas is a reactive gas capable of combining with the metal to form a dielectric film on the substrate.

12. A method of controlling a distribution of a plasma generated adjacent a cathode, comprising:

positioning at least two spaced apart anodes at different locations with respect to the cathode, said anodes having an effective dimension in at least one direction of eight centimeters or less, and

separately controlling electrical power to individual ones of said at least two anodes, thereby to control the distribution of the plasma, said separately controlling electrical power including energizing individual ones of said at least two anodes in time sequence.

13. A method of sputtering a dielectric film onto a substrate from a target connected to a negative voltage source and positioned within a vacuum chamber into which a reactive gas is introduced, wherein relative motion is provided between the target and substrate in one direction with the target extending across said substrate in a direction transverse to said one direction, characterized by moving an effective position of an anode at a positive voltage back and forth in said transverse direction between at least first and second positions at least five times while a given location of the substrate is within a deposition zone adjacent said cathode.

14. The method of claim 13 wherein first and second anodes are held fixed at said first and second positions and said effective movement is accomplished by controlling a connection of electrical power thereto.