Method of fabricating a micromechanical sensor
First Claim
1. A method of manufacturing a micromechanical sensor comprising the steps of:
- providing a support of silicon substrate;
applying a silicon-oxide layer onto the silicon substrate at a position where a micromechanical deflection part is to be formed;
producing contact window openings on the silicon substrate adjacent to the silicon-oxide layer;
depositing an epitaxial layer of silicon on the silicon-oxide layer and on the contact window openings, the epitaxial layer growing in polycrystalline form on the silicon-oxide layer and in single crystal form on the contact window openings, thereby providing a direct connection to the silicon substrate; and
removing the silicon-oxide layer during an etching process.
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Accused Products
Abstract
A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).
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Citations
16 Claims
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1. A method of manufacturing a micromechanical sensor comprising the steps of:
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providing a support of silicon substrate; applying a silicon-oxide layer onto the silicon substrate at a position where a micromechanical deflection part is to be formed; producing contact window openings on the silicon substrate adjacent to the silicon-oxide layer; depositing an epitaxial layer of silicon on the silicon-oxide layer and on the contact window openings, the epitaxial layer growing in polycrystalline form on the silicon-oxide layer and in single crystal form on the contact window openings, thereby providing a direct connection to the silicon substrate; and removing the silicon-oxide layer during an etching process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a micromechanical structure, comprising the steps of:
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providing a silicon substrate support; applying an etching-layer onto the silicon substrate support; depositing a layer of polysilicon on the etching layer via an epitaxial process; and etching the etching-layer during an etching process. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification