Process for fabricating integrating circuits
First Claim
1. A process of fabricating a device comprising the steps of forming an opening in a material layer overlying a substrate and forming titanium nitride in said opening characterized in that said forming of said titanium nitride comprises introducing titanium tetrachloride within the vicinity of said substrate and reacting said titanium tetrachloride at a temperature between 23°
- and 500°
C. with a mole excess of atomic nitrogen produced in a plasma formed by an electron cyclotron resonator or a helical resonator, and with hydrogen whereby said titanium nitride is essentially devoid of chlorine.
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Abstract
Integrated circuits employing titanium nitride are significantly improved by using a specific method for formation of the titanium nitride in the device fabrication. In particular, a plasma such as one formed in an electron cyclotron resonance apparatus is employed to dissociate a source of nitrogen and a source of hydrogen and the dissociation products are combined at the integrated circuit deposition substrate with titanium tetrachloride. The resulting deposition is essentially devoid of chlorine and has advantageous step-coverage properties.
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Citations
9 Claims
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1. A process of fabricating a device comprising the steps of forming an opening in a material layer overlying a substrate and forming titanium nitride in said opening characterized in that said forming of said titanium nitride comprises introducing titanium tetrachloride within the vicinity of said substrate and reacting said titanium tetrachloride at a temperature between 23°
- and 500°
C. with a mole excess of atomic nitrogen produced in a plasma formed by an electron cyclotron resonator or a helical resonator, and with hydrogen whereby said titanium nitride is essentially devoid of chlorine. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- and 500°
Specification