Semiconductor integrated circuit device and fabrication method thereof
First Claim
1. A method of fabricating a semiconductor integrated circuit device comprising the steps of:
- providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface;
providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes, said substrate having a plurality of leads, each of which is electrically connected to one of other ends of said wirings;
forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method;
forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method;
simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and
bonding said first gold balls formed on said main surface of said chip to said wiring lands.
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Accused Products
Abstract
A semiconductor device is fabricated by forming first metal balls on electrode pads of a semiconductor chip. The first metal balls each can have a sharp tipped anchor. All of the anchors simultaneously flattened slightly only to the extent of equalizing the height thereof. The first metal balls are bonded to electrodes formed on a substrate with wirings by embedding the anchors into the electrodes. Alternatively, second metal balls can be formed on the electrodes which are then flattened to equalize the height thereof. The first metal balls, either with or without the anchors, are bonded to the second metal balls. The first and second metal balls are preferably heated during the bonding step to soften the second metal balls.
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Citations
21 Claims
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1. A method of fabricating a semiconductor integrated circuit device comprising the steps of:
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providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes, said substrate having a plurality of leads, each of which is electrically connected to one of other ends of said wirings; forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method; forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and bonding said first gold balls formed on said main surface of said chip to said wiring lands. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 19)
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15. A method of fabricating a semiconductor integrated circuit device comprising the steps of:
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providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first metal balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method, wherein said first metal balls each have an anchor; forming second metal balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second metal balls formed on said substrate by pressing said second metal balls with a flat surface to equalize the height of said second metal balls, said flattened second balls forming wiring lands; and bonding said first metal balls to said wiring lands by embedding the anchors of said first metal balls into said wiring lands. - View Dependent Claims (16, 17, 18)
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20. A method of fabricating a semiconductor integrated circuit device comprising the steps of:
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providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said substrate main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first metal balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method, wherein said first metal balls each have an anchor; forming second metal balls on said wiring electrodes of said substrate by a thermo-compression ball bonding method; and bonding said first metal balls to said second metal balls by embedding the anchors of said first metal balls into said second metal balls.
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21. A method of fabricating a semiconductor integrated circuit device comprising the steps of:
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providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method; forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and bonding said first gold balls formed on said main surface of said chip to said wiring lands.
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Specification