×

Semiconductor integrated circuit device and fabrication method thereof

  • US 5,616,520 A
  • Filed: 12/30/1994
  • Issued: 04/01/1997
  • Est. Priority Date: 03/30/1992
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of fabricating a semiconductor integrated circuit device comprising the steps of:

  • providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface;

    providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes, said substrate having a plurality of leads, each of which is electrically connected to one of other ends of said wirings;

    forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method;

    forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method;

    simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and

    bonding said first gold balls formed on said main surface of said chip to said wiring lands.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×