Nitride encapsulated thin film transistor fabrication technique

• US 5,616,933 A
• Filed: 10/16/1995
• Issued: 04/01/1997
• Est. Priority Date: 10/16/1995
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.), Sony Electronics Inc. (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.), Sony Electronics Inc. (Sony Group Corp.)
• Inventors: Li, Jia
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US08/543,404
• Time in Patent Office: 533 Days
• Field of Search: 257/410, 257/411, 257/57, 257/72, 257/347, 257/640, 257/649
• US Class Current: 257/57
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A thin film transistor includes a thin film transistor body above a gate electrode. The thin film transistor body is hydrogenated to prevent the transistor body from apparently capturing and releasing electrons. The transistor body itself is coated with an upper and lower layer of silicon nitride to prevent the trapped hydrogen from migrating out of the transistor body over time. This is formed by depositing a layer of silicon dioxide, then a layer of silicon nitride over the gate electrode, followed by deposition of a polysilicon layer which is then etched to form the transistor body. This is hydrogenated after threshold adjustment implant and source/drain implant and subsequently coated with an upper sealing layer of silicon nitride. This enables the establishment of relatively high Ion/Ioff ratio and improves the reliability of the transistor.

Claims

1. A thin film transistor comprising a hydrogenated semiconductor transistor body adjacent a gate electrode separated from said gate electrode by a gate dielectric;

said transistor body having a top planar surface and a bottom planar surface wherein said top planar surface is covered with an upper sealing layer, and said bottom planar surface is covered with a bottom sealing layer separating said bottom surface from said gate dielectric wherein said upper sealing layer and said bottom sealing layer are effective to prevent hydrogen migration from said transistor body.

2. The transistor claimed in claim 1 wherein said semiconductor is polysilicon.

3. The transistor claimed in claim 1 wherein said sealing layer is silicon nitride.