Semiconductor laser

• US 5,617,437 A
• Filed: 11/21/1995
• Issued: 04/01/1997
• Est. Priority Date: 11/24/1994
• Status: Expired due to Term

• Current Assignee: Nichia Corporation
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Fukunaga, Toshiaki
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/561,465
• Time in Patent Office: 497 Days
• Field of Search: 372/45
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/32333 based on InGaAsP
• CPC Class Codes: H01S 5/3409 special GRINSCH structures
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

A semiconductor laser comprises an active layer, optical waveguide layers formed on opposite sides of the active layer, and cladding layers. The active layer is constituted of an InGaAsP type of compound semiconductor. Each of the optical waveguide layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements is at least 2%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%. Each of the cladding layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%.

Claims

1. A semiconductor laser comprising an active layer, optical waveguide layers formed on opposite sides of the active layer, and cladding layers,

wherein the active layer is constituted of an InGaAsP type of compound semiconductor,

each of the optical waveguide layers is constituted of a compound semiconductor selected from the group consisting of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V segments is at least 2%, and an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%, and

each of the cladding layers is constituted of a compound semiconductor selected from the group consisting of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%, and an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%.

2. A semiconductor laser as defined in claim 1 wherein said active layer is constituted of In_x1 Ga_1-x1 As_1-y1 P_y1 (where 0≦

y1≦

0.98),

each of said optical waveguide layers is constituted of In_x2 (Ga_1-z2 Al_z2)_1-x2 As_1-y2 P_y2 (where 0≦

z2≦

1, 0≦

y2≦

0.98), and

each of said cladding layers is constituted of In_x3 (Ga_1-z3 Al_z3)_1-x3 As_1-y3 P_y3 (where 0≦

z2≦

z3≦

1, 0.9≦

y3≦

0.98, x3≈

0.49y3), which is lattice matched with GaAs.

3. A semiconductor laser comprising an active layer, optical waveguide layers formed on opposite sides of the active layer, and cladding layers,

wherein the active layer is constituted of an InGaAsP type of compound semiconductor,

each of the optical waveguide layers is constituted of a compound semiconductor selected from the group consisting of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements is at least 2%, and an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%,

each of the cladding layers is constituted of a compound semiconductor selected from the group consisting of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements is at least 2%, and an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements is at least 2%,

when one of the cladding layers, which is closer to a substrate of the semiconductor laser, is referred to as a lower cladding layer, and the other cladding layer, which is remoter from the substrate, is referred to as an upper cladding layer, said upper cladding layer comprises an upper first cladding layer, which is in contact with one of the optical waveguide layers, and an upper second cladding layer, which is formed on the side outward from said upper first cladding layer and in which the As/P ratio is higher than the As/P ratio in said upper first cladding layer, and

in regions of said upper cladding layer other than a partial region thereof, etching is carried out from the outer surface side of said upper second cladding layer approximately up to a boundary between said upper first cladding layer and said upper second cladding layer, said partial region of said upper cladding layer remaining in a ridge-like form, whereby an optical waveguide is formed.

4. A semiconductor laser as defined in claim 3 wherein said active layer is constituted of In_x1 Ga_1-x1 As_1-y1 P_y1 (where 0≦

y1≦

0.98),

each of said optical waveguide layers is constituted of In_x2 (Ga_1-z2 Al_z2)_1-x2 As_1-y2 P_y2 (where 0≦

z2≦

1, 0≦

y2≦

0.98),

each of said lower cladding layer and said upper first cladding layer is constituted of In_x3 (Ga_1-z3 Al_z3)_1-x3 As_1-y3 P_y3 (where 0≦

z2≦

z3≦

1, 0.9≦

y3≦

0.98, x3≈

0.49y3), which is lattice matched with GaAs, and

said upper second cladding layer is constituted of In_x4 (Ga_1-z4 Al_z4)_1-x4 As_1-y4 P_y4 (where 0≦

z3<

z4, 0≦

y4≦

0.5, x4≈

0.49y4), which is lattice matched with GaAs.