×

High-frequency semiconductor wafer processing apparatus and method

  • US 5,618,382 A
  • Filed: 06/25/1993
  • Issued: 04/08/1997
  • Est. Priority Date: 10/03/1989
  • Status: Expired due to Term
First Claim
Patent Images

1. A process for performing a nonreactive plasma soft etch comprising the steps of:

  • (a) providing an inert gas mixture within a plasma reactor chamber; and

    (b) coupling RF power to an electrode within the chamber, the RF power being of a frequency substantially higher than 13.56 MHz;

    (c) wherein the RF power level and frequency are selected so as to excite the gas mixture to a plasma state and so as to produce a self-bias on said electrode less than or equal to 500 volts.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×