Method of making light valve device using semiconductive composite substrate
First Claim
1. A process for manufacturing a semiconductor device, comprising:
- a first step of forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film;
a second step of forming a semiconductor integrated circuit in the single crystal semiconductor thin film;
a third step of fixedly adhering a support substrate in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate;
a fourth step of removing the temporary substrate to expose a surface of the insulating film to the outside; and
a fifth step of subjecting the exposed surface of the insulating film to a treatment including at least forming an electrode.
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Abstract
A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.
93 Citations
13 Claims
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1. A process for manufacturing a semiconductor device, comprising:
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a first step of forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film; a second step of forming a semiconductor integrated circuit in the single crystal semiconductor thin film; a third step of fixedly adhering a support substrate in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate; a fourth step of removing the temporary substrate to expose a surface of the insulating film to the outside; and a fifth step of subjecting the exposed surface of the insulating film to a treatment including at least forming an electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A process for manufacturing a semiconductor device, comprising:
- depositing a layer of silicon dioxide on a surface of a first substrate;
thermally bonding a second substrate of single crystal silicon on the silicon dioxide layer;
subjecting the second substrate to processing to form a single crystal semiconductor thin film;
forming a semiconductor integrated circuit in the single crystal semiconductor thin film;
depositing an adhesive on a surface of the semiconductor integrated circuit and solidifying the adhesive to form a support substrate having a single-layer structure;
removing the first substrate to expose a surface of the silicon dioxide layer; and
subjecting the exposed surface of the silicon dioxide layer to a treatment including at least forming an electrode. - View Dependent Claims (9, 10, 11)
- depositing a layer of silicon dioxide on a surface of a first substrate;
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12. A process for manufacturing a semiconductor device, comprising:
- depositing a layer of silicon nitride on a surface of a first substrate;
depositing a layer of silicon dioxide on the silicon nitride layer;
thermally bonding a second substrate of single crystal silicon on the silicon dioxide layer;
subjecting the second substrate to processing to form a single crystal semiconductor thin film;
forming a semiconductor integrated circuit in the single crystal semiconductor thin film;
fixedly adhering a support substrate in face-to-face relation to a surface of the semiconductor integrated circuit opposite the first substrate;
etching the first substrate using the silicon nitride layer as an etch stopper to expose a surface of the silicon dioxide layer; and
subjecting the exposed surface of the silicon dioxide layer to a treatment including at least forming an electrode. - View Dependent Claims (13)
- depositing a layer of silicon nitride on a surface of a first substrate;
Specification