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Method of making light valve device using semiconductive composite substrate

  • US 5,618,739 A
  • Filed: 06/02/1995
  • Issued: 04/08/1997
  • Est. Priority Date: 11/15/1990
  • Status: Expired due to Term
First Claim
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1. A process for manufacturing a semiconductor device, comprising:

  • a first step of forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film;

    a second step of forming a semiconductor integrated circuit in the single crystal semiconductor thin film;

    a third step of fixedly adhering a support substrate in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate;

    a fourth step of removing the temporary substrate to expose a surface of the insulating film to the outside; and

    a fifth step of subjecting the exposed surface of the insulating film to a treatment including at least forming an electrode.

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