Method of making flash EPROM with conductive sidewall spacer contacting floating gate

• US 5,618,742 A
• Filed: 10/26/1994
• Issued: 04/08/1997
• Est. Priority Date: 01/22/1992
• Status: Expired due to Term

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Yiu, Tom D.-H., Lin, Tien-Ler, Shone, Fuchia
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Booth, Richard A.
• Application Number:
  US08/329,487
• Time in Patent Office: 895 Days
• Field of Search: 437/43, 437/48, 437/52
• US Class Current: 438/263
• CPC Class Codes: G08G 1/017 identifying vehicles G08G1/015, G08G1/054 take precedence
• CPC Class Codes: G11C 16/0491 Virtual ground arrays
• CPC Class Codes: H10B 41/10 characterised by the top-view layout
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

Contactless flash EPROM cell and array designs, and methods for fabricating the same result in dense, segmentable flash EPROM chips. Also, an extended floating gate structure, and method for manufacturing the extended floating gate allow for higher capacitive coupling ratios in flash EPROM circuitry with very small design rules. The floating gates are extended in a symmetrical fashion in a drain-source-drain architecture, so that each pair of columns of cells has a floating gate which is extended in opposite directions from one another. This allows one to take advantage of the space on the cell normally consumed by the isolation regions, to extend the floating gates without increasing the layouts of the cells. Also, an easily scalable design is based on establishing conductive spacers on the sides of floating gate deposition layers which are used for self-alignment of the source and drain. According to this structure, a floating gate deposition is first laid down and used for establishing self-aligned source and drain diffusion regions. After deposition of the source and drain, conductive spacers are deposited on the sides of the first floating gate structure. These conductive spacers can be deposited in a symmetrical fashion, and are easily scalable to large scale arrays of flash EPROM designs.

Claims

1. A method for fabricating a plurality of floating gate transistors on a substrate, comprising:

forming a floating gate insulating layer over at least a portion of the substrate;

defining a plurality of strips of conductive material in a first layer of conductive material over the floating gate insulating layer;

exposing the substrate to dopants so that the plurality of strips act as a mask and a plurality of doped regions in the substrate are formed between the plurality of strips of conductive material;

annealing the substrate to drive in the dopants in the doped regions to establish buried diffusion regions aligned with the strips of conductive material;

forming a thicker insulator with an insulating material over the buried diffusion regions;

exposing the plurality of strips of conductive material;

depositing a second layer of conductive material over and in with the plurality of strips of conductive material;

etching the second layer of conductive material for a time to form self-aligned conductive spacer lines overlying the thicker insulator over the buried diffusion regions, each conductive spacer line contacting only one of the plurality of strips of conductive material;

forming a control gate insulator over the plurality of strips of conductive material and the conductive spacer lines;

depositing a third layer of conductive material over the control gate insulator; and

etching the third layer the conductive spacers, and the plurality of conductive strips to define control gate conductors and floating gates.

2. The method of claim 1, wherein the step of exposing the plurality of conductive strips, includes:

covering the plurality of strips of conductive material with a protective substance before the step of annealing, which prevents formation of an insulating material on the conductive material during the step of annealing; and

removing the protective substance before the step of depositing a second layer of conductive material.

3. The method of claim 1, wherein the first and second layers have thicknesses of about T units, and the step of etching the second layer is timed to remove about T units of thickness of the conductive material leaving essentially the plurality of strips formed with the first layer and spacer lines on the sides of the plurality of strips consisting of remnants of the second layer.

4. The method of claim 1, further including:

implanting a dopant in the second layer of conductive material to improve electrical contact between the plurality of strips and the second conductive layer.

5. A method for fabricating a plurality of flash EPROM transistors on a substrate, comprising:

forming a floating gate insulating layer over at least a portion of the substrate;

defining a plurality of strips of polysilicon in a first polysilicon layer over the floating gate insulating layer;

exposing the substrate to dopants so that the plurality of strips act as a mask and a plurality of doped regions in the substrate are formed between the plurality of strips of conductive material;

annealing the substrate to drive in the dopants in the doped regions to establish buried diffusion regions aligned with the strips of polysilicon;

forming a thicker insulator with an insulating material over the buried diffusion regions;

exposing the plurality of strips of polysilicon;

depositing a second polysilicon layer over and in contact with the plurality of strips;

etching the second polysilicon layer for a time to form self-aligned conductive spacer lines overlying the thicker insulator over the buried diffusion regions, each conductive spacer line contacting only one of the plurality of strips;

forming a control gate insulator over the plurality of strips and the conductive spacer lines;

depositing a third polysilicon layer over the control gate insulator; and

etching the third layer the conductive spacers, and the plurality of conductive strips to define control gate conductors and floating gates.

6. The method of claim 5, wherein the step of exposing the plurality of conductive strips, includes:

covering the plurality of strips with a nitride before the step of annealing, which prevents formation of an oxide on the polysilicon during the step of annealing; and

removing the nitride to expose at least respective portions of the plurality of strips before the step of depositing a second polysilicon layer.

7. The method of claim 5, wherein the first and second polysilicon layers have thicknesses of about T units, and the step of etching the second polysilicon layer is timed to remove about T units of thickness of the polysilicon leaving essentially the plurality of strips formed with the first polysilicon layer and spacer lines on the sides of the plurality of strips consisting of remnants of the second polysilicon layer.

8. The method of claim 5, further including:

implanting a dopant in the second polysilicon layer to improve electrical contact between the plurality of strips and the second polysilicon layer.

9. The method of claim 6, wherein the plurality of strips have respective tops and sides, and the step of covering the plurality of strips with nitride includes forming a first nitride layer after the first polysilicon layer and before defining the plurality of strips, so that the tops of the plurality of strips are covered with the first nitride layer after the step of defining;

forming a second layer of nitride over the plurality of strips which covers the first layer on the tops of the strips, the sides of the strips, and the doped regions; and

anisotropically etching the second layer of nitride to expose the doped regions without exposing the tops or the sides of the strips.

10. The method of claim 9, wherein the step of removing the nitride after the step of annealing comprises removing essentially all of the nitride.