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Thin film transistor

  • US 5,619,045 A
  • Filed: 07/09/1996
  • Issued: 04/08/1997
  • Est. Priority Date: 11/05/1993
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor comprising:

  • an active region provided on a substrate and comprising a source and drain and a channel provided between said source and drain;

    a gate electrode provided on said active region; and

    an anodic oxide of the material constituting the gate electrode provided on the side and the upper face of said gate electrode,wherein said anodic oxide comprises a non-porous anodic oxide provided on the side of the gate electrode and a porous anodic oxide provided on the outer side of said non-porous anodic oxide, andwherein said channel extends to an end of said porous anodic oxide.

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