Sapphireless group III nitride semiconductor and method for making same
First Claim
1. A method for manufacturing a gallium nitride (GAN) sapphireless semiconductor film, comprising the steps of:
- forming zinc oxide (ZnO) layers on respective ones of at least two sides of a sapphire substrate;
forming semiconductor layers of Group III nitride compound semiconductor satisfying the formula Alx Gay In1-x-y N, inclusive of x=0, y=0, and x=y=0 on respective ones of said ZnO layers;
etching said ZnO layers with a ZnO-specific etchant; and
separating said semiconductor layers from said sapphire substrate.
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Abstract
A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Alx Gay In1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Alx Gay In1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
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12 Claims
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1. A method for manufacturing a gallium nitride (GAN) sapphireless semiconductor film, comprising the steps of:
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forming zinc oxide (ZnO) layers on respective ones of at least two sides of a sapphire substrate; forming semiconductor layers of Group III nitride compound semiconductor satisfying the formula Alx Gay In1-x-y N, inclusive of x=0, y=0, and x=y=0 on respective ones of said ZnO layers; etching said ZnO layers with a ZnO-specific etchant; and separating said semiconductor layers from said sapphire substrate. - View Dependent Claims (3, 5, 7, 9, 11, 12)
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2. A semiconductor produced by:
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forming zinc oxide (ZnO) layers on respective ones of at least two sides of a sapphire substrate; forming semiconductor layers of Group III nitride compound semiconductor satisfying the formula Alx Gay In1-x-y N, inclusive of x=0, y=0, and x=y=0 on respective ones of said ZnO layers; etching said ZnO layers with a ZnO-specific etchant; and separating said semiconductor layers from said sapphire substrate. - View Dependent Claims (4, 6, 8, 10)
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Specification