Automatic impedance matching apparatus and method

• US 5,621,331 A
• Filed: 07/10/1995
• Issued: 04/15/1997
• Est. Priority Date: 07/10/1995
• Status: Expired due to Term

• Current Assignee: MKS Instruments Incorporated
• Original Assignee: Applied Science and Technology, Inc. (MKS Instruments Incorporated)
• Inventors: McVey, Brian D., Rameriz, Richard A., Smith, Donald K.
• Primary Examiner(s): Regan, Maura K.
• Application Number:
  US08/500,411
• Time in Patent Office: 645 Days
• Field of Search: 324/643, 324/638, 324/637, 324/639, 324/642
• US Class Current: 324/645
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32266 Means for controlling power transmitted to the plasma
• CPC Class Codes: H01J 37/32311 Circuits specially adapted for controlling the microwave discharge
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01P 5/04 with variable factor of coupling

Abstract

Methods for rapidly adjusting the impedance of a variable impedance apparatus to match the impedance of a source to the impedance of a load, where the load impedance is a nonlinear function of the power delivered to the load, are described. In addition, an automatic impedance matching apparatus for matching the impedance of a source to the impedance of a load and for maintaining a stable plasma are described. The apparatus includes a variable impedance apparatus, a plurality of electric field sensors, a photosensitive detector, a data processor, and a memory.

Claims

1. A method of impedance matching a source to a load using a multi-stub tuner positioned between the source and the load comprising:

a) determine a reflection coefficient associated with the load;

b) determining scattering parameters of the multi-stub tuner;

c) determining scattering parameters of the multi-stub tuner that theoretically match the source impedance to the load impedance;

d) determining stub displacements from current stub positions of the multi-stub tuner to positions corresponding to the scattering parameters of the multi-stub tuner that theoretically match the source impedance to the load impedance provided that the load impedance remains constant as the stub positions are varied;

e) determining scaled stub displacements by combining the stub displacements with a scaling factor;

f) moving the stubs a distance corresponding to the scaled stub displacements; and

g) repeating steps a-f until the magnitude of the reflection coefficient is less than a predetermined value.

2. The method of claim 1 further comprising the step of providing a data processor and memory.

3. The method of claim 1 wherein the scaling factor is a function of the reflection coefficient.

4. The method of claim 1 wherein the step of combining the stub displacements with a scaling factor comprises multiplying the displacement by a scaling factor.

5. The method of claim 1 wherein the step of determining the reflection coefficient associated with a load comprises:

a) measuring the reflection coefficient associated with the multi-stub tuner and the load referenced to a source end of the multi-stub tuner; and

b) calculating the reflection coefficient referenced to a load end of the multi-stub tuner from the measurement taken in step a and from known characteristics of the multi-stub tuner.

6. The method of claim 1 wherein the step of determining scattering parameters that theoretically match the source impedance to the load impedance comprises determining scattering parameters that make a reflection coefficient at the load end of the tuner equal to a complex conjugate of the load reflection coefficient.

7. The method of claim 2 further comprising the step of storing stub positions and corresponding scattering parameters that match the source impedance to the load impedance in the memory.

8. The method of claim 7 wherein the step of determining the stub displacements from the initial stub positions to the positions corresponding to the scattering parameters that theoretically match the source impedance to the load impedance comprises recalling stored stub positions which correspond to the scattering parameters.

9. The method of claim 1 wherein the initial stub positions are predetermined stub positions corresponding to scattering parameters known to cause formation of a plasma.

10. The method of claim 2 further comprising the step of storing stub positions that cause formation of a plasma in the memory and moving the stubs to those initial stub positions before performing step d.

11. The method of claim 1 wherein the step of determining the scattering parameters of the multi-stub tuner that theoretically match the source impedance to the load impedance comprises determining the magnitude of the reflection coefficient at the source end and the phases of the reflection coefficient at the source and load ends of the multi-stub tuner for each pair of stubs in the multi-stub tuner.

12. The method of claim 1 wherein the step of measuring the reflection coefficient comprises receiving signals from a plurality of detectors positioned along a waveguide between the source and the load.

13. The method of claim 1 wherein the multi-stub tuner is a three-stub tuner.

14. The method of claim 1 wherein the predetermined value of the magnitude of the reflection coefficient in step g is 0.1.