Surface emission type semiconductor laser, method and apparatus for producing the same
First Claim
1. A surface emission type semiconductor laser comprising:
- a substrate formed of a compound semiconductor of a first conductance type;
a lower electrode formed on the bottom of said substrate;
a distributed reflection multilayer film mirror of the first conductance type formed on the top of said substrate;
a first clad layer of the first conductance type formed on said distributed reflection multilayer film mirror;
a quantum well active layer formed on said first clad layer;
a second clad layer of a second conductance type formed on said quantum well active layer and having one or more column-like portions;
a contact layer of the second conductance type formed on the column-like portion or portions in the second clad layer;
a buried insulation layer embedded around said column-like portion or portions of said second clad layer and said contact layer, including at least a first insulation layer which covers the surface of said second clad layer and said contact layer and which is formed of a silicon compound;
an upper electrode forming a bridge between said contact and buried insulation layers and having an opening facing part of said contact layer; and
a dielectric multilayer film mirror formed at least on said contact layer to cover the opening of said upper electrode.
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Accused Products
Abstract
A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105).
A surface emission type semiconductor laser is designed such that the lasing wavelength λG of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength λEM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) ΔλEM.
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Citations
50 Claims
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1. A surface emission type semiconductor laser comprising:
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a substrate formed of a compound semiconductor of a first conductance type; a lower electrode formed on the bottom of said substrate; a distributed reflection multilayer film mirror of the first conductance type formed on the top of said substrate; a first clad layer of the first conductance type formed on said distributed reflection multilayer film mirror; a quantum well active layer formed on said first clad layer; a second clad layer of a second conductance type formed on said quantum well active layer and having one or more column-like portions; a contact layer of the second conductance type formed on the column-like portion or portions in the second clad layer; a buried insulation layer embedded around said column-like portion or portions of said second clad layer and said contact layer, including at least a first insulation layer which covers the surface of said second clad layer and said contact layer and which is formed of a silicon compound; an upper electrode forming a bridge between said contact and buried insulation layers and having an opening facing part of said contact layer; and a dielectric multilayer film mirror formed at least on said contact layer to cover the opening of said upper electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A surface emission type semiconductor laser comprising:
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a substrate formed of a compound semiconductor of a first conductance type; a lower electrode formed on the bottom of said substrate; a distributed reflection multilayer film mirror of the first conductance type formed on the top of said substrate; a first clad layer of the first conductance type formed on said distributed reflection multilayer film mirror; a quantum well active layer formed on said first clad layer; a second clad layer of a second conductance type formed on said quantum well active layer and having one or more column-like portions; a contact layer of the second conductance type formed on the column-like portion or portions in the second clad layer; a buried insulation layer embedded around said column-like portion or portions of said second clad layer and said contact layer; an upper electrode formed to bridge between said contact and buried insulation layers and having an opening facing a part of said contact layer; and a dielectric multilayer film mirror formed at least on said contact layer to cover the opening of said upper electrode, wherein the peak wavelength λ
G of the gain spectrum of said quantum well active layer is set to be smaller than a desired lasing wavelength λ
EM by a given differential wavelength (gain offset) Δ
λ
BS. - View Dependent Claims (35, 36)
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37. A method of producing a surface emission type semiconductor laser, comprising the steps of:
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(a) forming semiconductor layers including at least a distributed reflection type multilayer film mirror of a first conductance type, a first clad layer of the first conductance type, a quantum well active layer, a second clad layer of a second conductance type and a contact layer of the second conductance type on a substrate formed of a first conductance type compound semiconductor through epitaxial growth; (b) etching said contact and second clad layers to form one or more column-like portions; (c) forming a buried insulation layer including at least a first insulation layer of silicon compound covering the surface of said second clad layer and said contact layer around said column-like portion or portions; (d) forming an upper electrode having an opening facing a part of said contact layer and bridging between said contact layer and said buried insulation layer; and (e) forming a dielectric multilayer film mirror at least on said contact layer to cover the opening of said upper electrode. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 49)
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48. A method of producing a surface emission type semiconductor laser, comprising the steps of:
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(a) forming semiconductor layers including at least a distributed reflection type multilayer film mirror of a first conductance type, a first clad layer of the first conductance type, a quantum well active layer, a second clad layer of a second conductance type and a contact layer of the second conductance type on a substrate formed of a first conductance type compound semiconductor through epitaxial growth; (b) etching said contact and second clad layers to form one or more column-like portions; (c'"'"') forming a buried insulation layer around said column-like portion or portions; (d) forming an upper electrode having an opening facing a part of said contact layer and bridging between the contact layer and the buried insulation layer; and (e) forming a dielectric multilayer film mirror at least on said contact layer to cover the opening of said upper electrode, said semiconductor layers being controlled such that the peak wavelength λ
G of the gain spectrum of said quantum well active layer is smaller than a desired lasing wavelength λ
EM by a predetermined differential wavelength (gain offset) Δ
λ
BS. - View Dependent Claims (50)
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Specification