Method of fabricating device made of thin diamond foil

• US 5,622,586 A
• Filed: 12/30/1994
• Issued: 04/22/1997
• Est. Priority Date: 01/10/1994
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kadono, Masaya, Inushima, Takashi, Vaitkus, Rimantas
• Primary Examiner(s): Simmons, David A.
• Assistant Examiner(s): Rivard, Paul M.
• Application Number:
  US08/366,573
• Time in Patent Office: 844 Days
• Field of Search: 156/344, 156/247, 156/249, 437/974, 216/13, 216/36, 216/16, 216/20, 148/DIG. 135, 148/DIG. 2, 73/204.26, 73/204.25
• US Class Current: 156/247
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: H01L 21/4871 Bases, plates or heatsinks
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3732 Diamonds
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: Y10S 148/135 : Removal of substrate
• CPC Class Codes: Y10S 156/922 : Specified electronic component delaminating in preparation for recycling
• CPC Class Codes: Y10T 156/11 : Methods of delaminating, per se; i.e. , separating at bonding face

Abstract

Method of fabricating a device made of a thin diamond film having a thickness of less than 10 μm which is difficult to handle. The method is initiated by forming a thin diamond film on a silicon substrate to a thickness of about 5 μm by chemical vapor deposition. Then, paraffin is applied. The substrate is removed with hydrofluoric acid. Thus, the diamond film is retained on the paraffin that is made to act as a base. A required circuit is formed on the surface of the diamond film. Finally, the paraffin is removed. In this way, a device using the diamond film is completed. This structure can be used as a device for measuring thermal effect, using a thin diamond film. For example, the structure can be used for fabrication of a flowsensor.

Claims

1. A method of fabricating a device comprising the steps of:

forming a thin film on a first base wherein said thin film is made of diamond;

adhesively bonding a second base to said thin film;

removing said first base from said thin film to expose a surface of said thin film;

forming a circuit on said exposed surface of said thin film;

cutting said thin film into a desired shape; and

removing said second base from the cut thin film having the circuit formed thereon.

2. The method of claim 1 wherein said thin film is made of diamond and has a thickness of less than 10 μ

m.

3. The method of claim 1 wherein said thin film is made of diamond, and wherein said cutting step is carried out by irradiation of laser light.

4. A method of fabricating a device comprising the steps of:

forming a thin film on a first base wherein said thin film is made of diamond;

adhesively bonding a second base to said thin film;

removing said first base from said thin film to expose a surface of said thin film;

forming a circuit on said exposed surface of said thin film;

cutting said second base and said thin film on said second base simultaneously into a desired shape; and

removing said second base from the cut thin film having the circuit formed thereon.

5. The method of claim 4 wherein said thin film is made of diamond and has a thickness of less than 10 μ

m.

6. The method of claim 4 wherein said thin film is made of diamond, and wherein said cutting step is carried out by irradiation of laser light.

7. A method of fabricating a device comprising the steps of:

forming a thin film on a first base;

adhesively bonding a second base to said thin film;

removing said first base to expose a surface of said thin film;

forming a circuit on said exposed surface of said thin film;

cutting said second base and said thin film on said second base into a desired shape to obtain at least one cut portion of said second base having at least one unit provided on said cut portion;

holding said at least one unit on a third base with said at least one unit being provided on said cut portion; and

removing said cut portion of said second base from said at least one unit.