Reducing particulate contamination during semiconductor device processing

• US 5,622,595 A
• Filed: 11/20/1995
• Issued: 04/22/1997
• Est. Priority Date: 06/16/1992
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lanucha, Joseph, Gupta, Anand
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/559,855
• Time in Patent Office: 519 Days
• Field of Search: 156/635.1, 156/643.1, 437/926, 437/939, 437/946, 437/949, 148/DIG. 17, 148/DIG. 21, 148/DIG. 22, 148/DIG. 131
• US Class Current: 438/710
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32431 Constructional details of the reactor
• CPC Class Codes: Y10S 438/935 Gas flow control
• CPC Class Codes: Y10S 438/974 Substrate surface preparation

Abstract

Contaminant particles in a vacuum plasma processing chamber can be removed from the surface of a substrate in the chamber by first reducing the pressure in the chamber so as to elevate the particles above any obstruction about the substrate, including a clamping ring and the like, maintaining a plasma from a gas fed to the chamber so that the particles are in the plasma, and then increasing the gas flow to the chamber so as to sweep the particles out of the chamber through the exhaust system of the processing chamber while maintaining a plasma in the chamber.

Claims

1. A method of removing particles from the surface of a substrate mounted in a plasma processing vacuum chamber comprising

a) reducing the pressure in the chamber while maintaining a plasma of a gas stream in the chamber so that the particles are elevated above any obstructions near the substrate being processed;

and

b) increasing the flow of the gas stream to carry the elevated particles in the gas stream away from the surface of the substrate.

2. A method according to claim 1 wherein the process is an etch process and the gas is argon.

3. A method according to claim 1 wherein the pressure in step a) is reduced to about 15 to 40 millitorr.

4. A method according to claim 1 wherein the gas flow is increased to about 100 to about 145 sccm.

5. A method according to claim 2 wherein the argon flow is increased to about 120 to about 135 sccm.

6. A method for removing particles generated in a vacuum plasma reactor chamber having a plasma sheath region and a vacuum exhaust system during plasma processing of a substrate comprising:

a) maintaining a plasma of an inert gas in said chamber;

b) reducing the pressure in said chamber to elevate said particles to the plasma sheath region and away from the surface of said substrate; and

c) increasing the flow of the inert gas without increasing the pressure in the chamber, thereby sweeping said particles in said inert gas stream into the vacuum chamber exhaust system.

7. A method according to claim 6 wherein said plasma is generated by an RF power source.

8. A method according to claim 6 wherein said pressure is reduced to from about 15-40 millitorr.

9. A method according to claim 6 wherein said inert gas flow is increased to about 100-145 sccm.

10. A method according to claim 6 wherein said inert gas is argon and said gas flow is increased to about 120-135 sccm.

11. A method of removing particles from the surface of a substrate mounted in a vacuum plasma processing chamber having a source of power and a gas inlet connected thereto which comprises

a) reducing the pressure in the chamber while maintaining a plasma from a gas stream supplied through said gas inlet in said chamber above the surface of the substrate so as to lift particles on the surface of the substrate into the plasma region;

and

b) increasing the gas flow rate of said gas stream so as to carry said elevated particles away from the substrate.

12. A method according to claim 11 wherein said gas is selected from the group consisting of an inert gas, a processing gas and a mixture of an inert gas and a processing gas.

13. A method according to claim 11 wherein said gas is a processing gas and said power is reduced so that no reaction takes place on the surface of the substrate during lifting of the particles.