Method for fabricating active substrate
First Claim
1. A sequential method for fabricating an active matrix substrate comprised of a plurality of gate electrodes, in a specific region of which a slit pattern is provided, made of a non-transparent material formed on a specific region of a first side of a transparent substrate having a second side opposite said first side, a first insulating layer formed on the transparent substrate and the gate electrodes, a first semiconductor layer formed on the first insulating layer, a second semiconductor layer formed on the first semiconductor layer, and a plurality of source and drain electrodes formed on the first insulating layer and said second semiconductor layer, said method comprising at least:
- a step of coating a positive photoresist layer on the second semiconductor layer,a step of light over-exposure effected from the second side of the transparent substrate,a step of developing the positive photoresist layer, anda step of overetching to remove a part of the first and second semiconductor layers by using the developed positive photoresist layer as a mask.
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Abstract
A method for fabricating an active matrix substrate for forming constituent elements such as a semiconductor layer, a passivation layer, an electrode material and other elements, uses a photoresist exposed from the reverse side of the substrate, using the gate electrode pattern made of opaque material on a transparent substrate as the mask. This method contributes to lowering the cost and improving the performance of semiconductor devices.
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Citations
17 Claims
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1. A sequential method for fabricating an active matrix substrate comprised of a plurality of gate electrodes, in a specific region of which a slit pattern is provided, made of a non-transparent material formed on a specific region of a first side of a transparent substrate having a second side opposite said first side, a first insulating layer formed on the transparent substrate and the gate electrodes, a first semiconductor layer formed on the first insulating layer, a second semiconductor layer formed on the first semiconductor layer, and a plurality of source and drain electrodes formed on the first insulating layer and said second semiconductor layer, said method comprising at least:
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a step of coating a positive photoresist layer on the second semiconductor layer, a step of light over-exposure effected from the second side of the transparent substrate, a step of developing the positive photoresist layer, and a step of overetching to remove a part of the first and second semiconductor layers by using the developed positive photoresist layer as a mask.
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2. A sequential method for fabricating an active matrix substrate, comprising:
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forming a plurality of gate electrodes spaced apart on a first principal surface of a transparent substrate, said gate electrodes made of a non-transparent material; forming an insulating layer on said gate electrodes and on said first principal surface of said transparent substrate; forming at least one semiconductor layer on said insulating layer; forming a positive photoresist layer on said at least one semiconductor layer; directing light onto a second principal surface of said transparent substrate which is opposite said first principal surface to effect exposure of said positive photoresist layer except for portions of said positive photoresist layer masked by said gate electrodes; developing said positive photoresist layer and removing said positive photoresist layer except for said portions of said positive photoresist layer masked by said gate electrodes; etching away said at least one semiconductor layer using said portions of said positive photoresist layer as a mask; removing said portions of said positive photoresist layer; and forming source and drain electrodes electrically connected to said at least one semiconductor layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A sequential method for fabricating an active matrix substrate, comprising:
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forming a plurality of gate electrodes spaced apart on a first principal surface of a transparent substrate, said gate electrodes made of a non-transparent material; forming an insulating layer on said gate electrodes and on said first principal surface of said transparent substrate; forming at least one semiconductor layer on said insulating layer; forming a negative photoresist layer on said at least one semiconductor layer; directing light onto a second principal surface of said transparent substrate which is opposite said first principal surface to effect exposure of said negative photoresist layer except for portions of said negative photoresist layer masked by said gate electrodes; developing said negative photoresist layer and removing said portions of said negative photoresist layer masked by said gate electrodes to expose portions of said at least one semiconductor layer located over said gate electrodes; forming a conductive layer on said negative photoresist layer and on said portions of said at least one semiconductor layer; removing said negative photoresist layer and the conductive layer formed thereon; etching away said at least one semiconductor layer using said conductive layer formed on said portions of said at least one semiconductor layer as a mask; and forming source and drain electrodes electrically connected to said at least one semiconductor layer. - View Dependent Claims (13, 14, 15, 16)
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17. A sequential method for fabricating an active matrix substrate, comprising:
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forming a plurality of gate electrodes spaced apart on a first principal surface of a transparent substrate; forming a first insulating layer on said gate electrodes and on said first principal surface of said transparent substrate; forming a first semiconductor layer on said first insulating layer; forming a second insulating layer on said first semiconductor layer; forming a positive photoresist layer on said second insulating layer; directing light onto a second principal surface of said transparent substrate which is opposite said first principal surface to effect exposure of said positive photoresist except for portions of said positive layer masked by said gate electrodes; developing said positive photoresist layer and removing said positive photoresist layer except for said portions of said positive photoresist layer masked by said gate electrodes; etching away said second insulating layer using said portions of said positive photoresist layer as a mask; heat treating said portions of said positive photoresist layer to cause said portions of said positive photoresist layer becomes larger; etching away said first semiconductor layer using said portions of said positive photoresist layer as a mask; etching away said positive photoresist layer; forming a second semiconductor layer at least on said second insulating layer and on said first semiconductor layer; forming source and drain electrodes on said second semiconductor layer.
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Specification