Infrared sensing device

• US 5,623,158 A
• Filed: 06/07/1995
• Issued: 04/22/1997
• Est. Priority Date: 03/01/1995
• Status: Expired due to Fees

• Current Assignee: L-3 Communications Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Texas Instruments, Inc.
• Inventors: Owen, Robert A., Belcher, James F., Kyle, Robert J. S., Frank, Steven N., Stanford, Charles E.
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/483,771
• Time in Patent Office: 685 Days
• Field of Search: 257/433, 257/436, 257/437, 257/440, 257/446, 257/448, 257/459, 257/466
• US Class Current: 257/446
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: Y10S 148/08 Infrared
• CPC Class Codes: Y10S 148/135 Removal of substrate
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.

Claims

1. An infrared sensing device, said device comprising:

an optical coating;

a common electrode above a substrate and connected to said optical coating;

thermal isolation pixels in a sensing area in said substrate and below said common electrode;

bias contact areas in said substrate around a periphery of said sensing area;

a contact metal layer below said thermal isolation pixels in said sensing area and below said bias contact areas and connecting said thermal isolation pixels and said bias contact areas to an integrated circuit (IC).

2. The device of claim 1, wherein said contact metal layer below said bias contact areas includes a first and a second metal layer.

3. The device of claim 1, wherein said optical coating is comprised of three material layers.

4. The device of claim 3, wherein said three material layers is comprised of:

an electrical conducting coat;

a 1/4 wavelength separator coat on top of said electrical conducting coat; and

a transparent coat on top of said 1/4 wavelength coat.

5. The device of claim 1, wherein said substrate includes a thermally sensitive substrate of barium strontium titanate.

6. The device of claim 1, wherein said contact metal layer is Au.

7. The device of claim 1, wherein said contact metal layer is NiCr.

8. The device of claim 1, wherein said contact metal layer is TiW.

9. An infrared sensing device, said device comprising:

a common electrode over a substrate;

a first elevation layer over portions of said common electrode in a sensing area;

a second elevation layer over portions of said common electrode in a bias contact area around a periphery of said sensing area;

an optical coating over said first and said second elevation layers and said common electrode;

a contact metal layer on a backside of said substrate;

thermal isolation trenches throughout said device creating thermally isolated pixels and biasing vias around said periphery of said device; and

a bias metal in said biasing vias.

10. The device of claim 9, wherein said bias metal fills a vacancy in said second elevation layer.

11. The device of claim 10, wherein said bias metal includes a first and a second metal layer.

12. The device of claim 9, wherein said optical coating includes three material layers.

13. The device of claim 12, wherein said three material layers includes:

an electrical conducting coat;

a 1/4 wavelength separator coat on top of said electrical conducting coat; and

a transparent coat on top of said 1/4 wavelength coat.

14. The device of claim 9, wherein said substrate includes a thermally sensitive substrate of barium strontium titanate.

15. The device of claim 9, wherein said contact metal layer is Au.

16. The device of claim 9, wherein said contact metal layer is NiCr.

17. The device of claim 9, wherein said contact metal layer is TiW.