Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors

• US 5,625,199 A
• Filed: 01/16/1996
• Issued: 04/29/1997
• Est. Priority Date: 01/16/1996
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Baumbach, Joerg, Katz, Howard E., Dodabalapur, Ananth
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US08/587,426
• Time in Patent Office: 469 Days
• Field of Search: 257/57, 257/59, 257/61, 257/69, 257/350, 257/351, 257/369, 257/40
• US Class Current: 257/40
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 19/20 comprising components having an active region that includes an inorganic semiconductor
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Abstract

Complementary circuits with inorganic n-channel thin film transistors (TFTs) and organic p-channel TFTs can exhibit advantageous properties, without being subject to some of the drawbacks of prior art complimentary inorganic TFTs or complementary organic TFTs. In preferred embodiments of the invention, the n-channel inorganic TFTs have an amorphous Si active layer, and the p-channel organic TFTs have Δ-hexathienylene (α-6T) active layer. Complementary inverters according to the invention are disclosed, as is an exemplary processing sequence that can be used to manufacture integrated complementary inverters and other complementary circuits according to the invention.

Claims

1. An article comprising a first and a second transistor, said first and second transistors being operatively connected together, the first transistor being a n-channel transistor and the second transistor being a p-channel transistor;

CHARACTERIZED IN THAT

the n-channel transistor is an inorganic thin film transistor and the p-channel transistor is an organic thin film transistor.

2. Article according to claim 1, wherein the inorganic thin film transistor comprises an active layer comprising material selected from the group consisting of amorphous Si, polycrystalline Si, CdSe, TiO₂, ZnO and Cu₂ S, and wherein the organic thin film transistor comprises an active layer comprising material selected from the group consisting of

i) oligomers of thiophene with degree of oligomerization ≧

4 and ≦

8, linked via their 2- and 5-carbons;

ii) alternating co-oligomers of thienylene and vinylene, with thiophenes as terminal groups and 3-6 thiophene rings, linked via their 2- and 5-carbons;

iii) linear dimers and trimers of benzo [1, 2-b;

4, 5-b'"'"'] dithiophene;

iv) any of the oligomers of i), ii) and iii) with substituents on the 4- or 5-carbons of the end thiophenes;

v) tetracene, pentacene, and end-substituted derivatives thereof; and

vi) composites of p, p'"'"'-diaminobiphenyls in polymer matrices.

3. Article according to claim 2, wherein said substituents on the 4- or 5-carbons of the end thiophene are alkyl substituents with 1-20 carbons.

4. Article according to claim 1, wherein said first and second transistors are operatively connected to form a complimentary inverter circuit.

5. Article according to claim 1, wherein the inorganic thin film transistor comprises an active layer that comprises amorphous silicon.

6. Article according to claim 1, wherein the organic thin film transistor comprises an active layer that comprises α

-hexathienylene.

7. Article according to claim 6, wherein the inorganic thin film transistor comprises an active layer that comprises amorphous silicon.