Bipolar transistor circuit
First Claim
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1. A bipolar transistor circuit for use in a microwave high output amplifier, comprising:
- an NPN-type hetero-junction bipolar transistor used as an active element for amplification and including an emitter formed as an emitter layer of AlGaAs, a base formed of AlGaAs, and a collector,said bipolar transistor further comprising a high resistance or P- semiconductor layer having a smaller electron affinity than a semiconductor of said base, said semiconductor layer being provided around a periphery of said emitter layer and having a portion extending towards said collector to overlap a laterally exposed part of said base layer and a laterally exposed part of said collector; and
amplifying means comprising an inductance connected between said base and a ground, said emitter being connected to the ground,wherein a microwave signal is inputted to said base and an amplified signal is outputted from the collector of said bipolar transistor.
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Abstract
In an NPN type bipolar transistor, by employing AlGaAs or InGaAs having greater band gap than silicon, for an emitter and a base, doping amount of the emitter can be made smaller than that of the base to permit improvement of reverse withstanding voltage between the base and the emitter. Therefore, B class or C class bias can be used in a microwave band to improve efficiency.
51 Citations
1 Claim
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1. A bipolar transistor circuit for use in a microwave high output amplifier, comprising:
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an NPN-type hetero-junction bipolar transistor used as an active element for amplification and including an emitter formed as an emitter layer of AlGaAs, a base formed of AlGaAs, and a collector, said bipolar transistor further comprising a high resistance or P- semiconductor layer having a smaller electron affinity than a semiconductor of said base, said semiconductor layer being provided around a periphery of said emitter layer and having a portion extending towards said collector to overlap a laterally exposed part of said base layer and a laterally exposed part of said collector; and amplifying means comprising an inductance connected between said base and a ground, said emitter being connected to the ground, wherein a microwave signal is inputted to said base and an amplified signal is outputted from the collector of said bipolar transistor.
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Specification
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Current AssigneeNEC Corporation
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Original AssigneeNEC Corporation
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InventorsKusama, Noboru
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Primary Examiner(s)Ngo, Ngan V.
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Application NumberUS08/710,973Time in Patent Office217 DaysField of Search257/197, 257/200, 257/586, 330/285, 330/300US Class Current257/197CPC Class CodesH01L 29/7371 Vertical transistorsH03F 2200/06 A balun, i.e. balanced to o...H03F 2200/09 A balun, i.e. balanced to o...H03F 2200/171 A filter circuit coupled to...H03F 2200/222 A circuit being added at th...H03F 2200/366 Multiple MOSFETs are couple...H03F 2200/387 A circuit being added at th...H03F 3/191 Tuned amplifiers H03F3/193,...H03F 3/602 Combinations of several amp...
