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Method for detecting etching endpoint and etching apparatus and etching system using the method thereof

  • US 5,626,714 A
  • Filed: 12/06/1995
  • Issued: 05/06/1997
  • Est. Priority Date: 12/08/1994
  • Status: Expired due to Term
First Claim
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1. A method for detecting an etching endpoint, comprising steps of:

  • receiving plasma light generated during the plasma etching process;

    producing time series data of a signal corresponding to the amount of received light;

    performing an arithmetic operation on the time series data and thereby correcting the change of light amount, wherein said correction step corrects;

    the time series data by a function holding the ratio between values apart from each other by a set period;

    setting an unstable rise time in a test run, wherein said correction step corrects the time series data after for the unstable rise time;

    calculating an average value of the time series data for said unstable rise time, wherein said correction step causes the initial value of the corrected time series data to coincide with said average value; and

    detecting an etching endpoint from the corrected time series data.

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