Mechanical force sensing semiconductor device

• US 5,627,318 A
• Filed: 07/27/1995
• Issued: 05/06/1997
• Est. Priority Date: 08/21/1992
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Fujii, Tetsuo, Imai, Masahito
• Primary Examiner(s): Raevis, Robert
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US08/508,170
• Time in Patent Office: 649 Days
• Field of Search: 73/514.32, 73/514.16, 73/504.12, 73/504.13, 73/504.14, 361/307, 361/283.3, 361/321.1, 361/321.5, 437/186, 257/742
• US Class Current: 73/514.32
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: C07C 303/32 of salts of sulfonic acids
• CPC Class Codes: C07C 303/44 Separation; Purification
• CPC Class Codes: C07C 309/17 containing carboxyl groups bound to the carbon skeleton
• CPC Class Codes: G01C 19/56 Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
• CPC Class Codes: G01C 19/5656 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0817 for pivoting movement of the mass, e.g. in-plane pendulum
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part

Abstract

A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Claims

1. A mechanical force sensing semiconductor device comprising:

a substrate;

a semiconductor layer having a first surface adjacent said substrate and a second surface disposed in spaced parallel relation with respect to said substrate, said semiconductor layer having a fixed portion connected with said substrate and a movable portion linked with said fixed portion;

a first electrode formed as part of said movable portion;

a second electrode formed as part of said fixed portion and disposed in spaced relation from said movable portion and thus said first electrode;

internal wiring formed as part of said fixed portion of said semiconductor layer and electrically connected with said second electrode;

a first external contacting electrode disposed at said second surface of said semiconductor layer and electrically connected with said first electrode; and

a second external contacting electrode disposed at said second surface of said semiconductor layer and electrically connected with said internal wiring through a portion of said semiconductor layer;

said movable portion and said fixed portion being constructed and arranged such that movement of said movable portion effectuates a change in capacitance between said first electrode and said second electrode to enable movement of said movable portion to be detected as a result of said change in capacitance.

2. A mechanical force sensing semiconductor device in accordance with claim 1, wherein said semiconductor layer is formed as a polished portion of said substrate.

3. A mechanical force sensing semiconductor device in accordance with claim 1, wherein said second electrode is formed as a part of said internal wiring.

4. A mechanical force sensing semiconductor device in accordance with claim 1, wherein said first and second electrodes as well as said first and second external contacting electrodes comprise external wiring, and wherein said semiconductor layer includes therein an impurity diffusion layer forming a wiring layer extending continuously from said first surface to said second surface to electrically connect said internal wiring and said external wiring.

5. A mechanical force sensing semiconductor device in accordance with claim 1, wherein said internal wiring comprises polysilicon.

6. A mechanical force sensing semiconductor device in accordance with claim 1, wherein said movable portion has a greater size and weight than said fixed portion.

7. A mechanical force sensing semiconductor device in accordance with claim 1, further comprising a stopper member for limiting movement of said movable portion.

8. A mechanical force sensing semiconductor device in accordance with claim 7, wherein said stopper member is disposed above said movable portion.