Interferometer-based bolometer

• US 5,629,521 A
• Filed: 09/09/1996
• Issued: 05/13/1997
• Est. Priority Date: 12/11/1995
• Status: Expired due to Term

• Current Assignee: Transpacific IP Group Limited
• Original Assignee: Industrial Technology Research Institute
• Inventors: Chen, Chi-Nan, Lee, Shih-ping
• Primary Examiner(s): FIELDS, CAROLYN
• Application Number:
  US08/709,894
• Time in Patent Office: 246 Days
• Field of Search: 356/352, 250/338.1, 250/339.01, 250/339.02
• US Class Current: 250/338.1
• CPC Class Codes: G01J 3/26 using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49099 Coating resistive material on a base

Abstract

An infrared detector device is described. It is based on an infrared analog of the Fabry Perot interferometer, using one curved, fully reflecting, plate and one planar, mainly reflecting, but partially transmitting, plate. The space between these plates behaves as a resonant cavity which can be built to respond to either a broad or a narrow band of wavelengths in the general range between 1 and 15 microns. It is also possible to combine several detectors of different narrow bands in a single device. Actual detection of the radiation is based on use of thin film resistors, having a high thermal coefficient of resistance, that are thermally isolated from the other parts of the structure. Details relating to the manufacture of the devices are given.

Claims

1. An infrared radiation detection comprising:

a first plate of silicon, said first plate having a planar upper surface and a lower surface that includes a concavity with a reflectance of unity;

a second plate of silicon, said second plate having a toughened lower surface and a planar upper surface, said upper surface having a reflectance close to, and less than, unity and a small finite transmittance;

means for permanently supporting said first plate above said second plate, said means further comprising spacers that encompass said concavity, thereby forming a cavity between the plates; and

a temperature sensitive element, located inside said cavity, and thermally isolated from both of said silicon plates.

2. The structure of claim 1 wherein said first and second plates are parallel one to another.

3. The structure of claim 1, further comprising at least two colinear concavities in the lower surface of said first plate, wherein said second plate is disposed at an angle relative to a line joining the centers of said concavities.

4. The structure of claim 1 wherein the radius of curvature of the concavity is between about 15 and 50 microns.

5. The structure of claim 1 wherein the spacing between said first and second plates is between about 10 and 100 microns.

6. The structure of claim 3 wherein the angle between the plates is between about 1°

and 4°

of arc and the mean spacing between the plates is between about 15 and 50 microns.

7. The structure of claim 1 wherein the thickness of each of said plates is between about 200 and 500 microns.

8. The structure of claim 1 wherein the wavelength of the infrared radiation that is being detected is between about 1 and about 15 microns.

9. The structure of claim 8 wherein the reflectance of the upper surface of said second plate is at least 99% and absorption of said radiation is negligible.

10. The structure of claim 1 wherein the interior of said cavity comprises vacuum.

11. The structure of claim 1 wherein the lower surface of said first plate comprises a layer of aluminum.

12. The structure of claim 11 wherein the thickness of said layer is between about 0.5 and about 1.3 microns.

13. The structure of claim 1 wherein the upper surface of said second plate further comprises a layer of tungsten, molybdenum, or gold.

14. The structure of claim 13 wherein the thickness of said layer is between about 40 and about 75 nanometers.

15. The structure of claim 1 wherein said temperature sensitive element comprises a resistor formed from chromium or titanium oxide.