Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness

• US 5,629,543 A
• Filed: 08/21/1995
• Issued: 05/13/1997
• Est. Priority Date: 08/21/1995
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Cook, William, Ng, Sze H., Hshieh, Fwu-Iuan, Chang, Mike F., Ching, Lih-Ying
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): Hardy, David B.
• Application Number:
  US08/537,157
• Time in Patent Office: 631 Days
• Field of Search: 257/329, 257/330, 257/331, 257/332, 257/334, 257/335, 257/336, 257/337
• US Class Current: 257/330
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench DMOS transistor includes a buried layer region formed between the drain region and overlying drift region and having a doping type the same as that of the drift region and drain region. The buried layer region is more highly doped than the drain region or drift regions and is formed by e.g. implantation prior to epitaxial growth of the overlying drift region. By providing an optimized doping profile for the buried layer region, it is ensured that avalanche breakdown occurs at the buried layer region/body region. Thus drain-source on resistance is reduced because the JFET region present in prior art devices is eliminated, while device ruggedness and reliability are enhanced.

Claims

1. A transistor comprising:

a substrate region doped a first conductivity type;

a drift region overlying the substrate region and doped the first conductivity type to a lower concentration than the substrate;

a body region overlying the drift region and doped a second conductivity type;

a conductive gate electrode extending from a principal surface of the body region through the body region;

a source region doped the first conductivity type and formed in the body region, and extending to the principal surface thereof; and

a buried layer region doped the first conductivity type to a concentration greater than that of the substrate region, and extending at least in part into the drift region and adjacent the substrate region.

2. The transistor of claim 1, further comprising a body contact region doped the second conductivity type and to a higher concentration than the body region, and formed in the body region and extending to the principal surface thereof.

3. The transistor of claim 2, wherein the buried layer region extends to within 0.5 μ

m of the body contact region.

4. The transistor of claim 1, wherein a doping concentration of the buried layer region is greater than 10¹⁸ /cm³.

5. The transistor of claim 1, wherein a doping concentration of the buried layer region is at least 5 times that of the drift region.

6. The transistor of claim 1, wherein a width of the buried layer region is in a range of 1 to 2 μ

m.

7. The transistor of claim 1, wherein a thickness of the buried layer region is in a range of 0.5 to 2 μ

m.

8. The transistor of claim 1, wherein the doping concentration of the buried layer region is at least three times a doping concentration of the substrate region.

9. The transistor of claim 1, wherein the buried layer region extends closer to the body region than does the substrate region.

10. The transistor of claim 1, wherein the buried layer region extends at least 0.5 μ

m closer to the body region than does the substrate region.

11. A transistor comprising:

a substrate region doped a first conductivity type;

a drift region overlying the substrate region and doped the first conductivity type to a lower concentration than the substrate;

a body region overlying the drift region and doped a second conductivity type;

a conductive gate electrode extending from a principal surface of the body region through the body region;

a source region doped the first conductivity type and formed in the body region, and extending to the principal surface thereof; and

a buried layer region doped the first conductivity type tea concentration greater than that of the drift region, and extending at least in part into the drift region and adjacent the substrate region, wherein the buried layer region extends to within 0.5 μ

m of the body region.

12. A transistor comprising:

a substrate region doped a first conductivity type;

a drift region overlying the substrate region and doped the first conductivity type to a lower concentration than the substrate;

a body region overlying the drift region and doped a second conductivity type;

a conductive gate electrode extending from a principal surface of the body region through the body region;

a source region doped the first conductivity type and formed in the body region, and extending to the principal surface thereof; and

a buried layer region doped the first conductivity type to a concentration greater than that of the drift region, and extending at least in part into the drift region and adjacent the substrate region, wherein a width of the buried layer region is in a range of 1 to 2 μ

m.