×

Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness

  • US 5,629,543 A
  • Filed: 08/21/1995
  • Issued: 05/13/1997
  • Est. Priority Date: 08/21/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. A transistor comprising:

  • a substrate region doped a first conductivity type;

    a drift region overlying the substrate region and doped the first conductivity type to a lower concentration than the substrate;

    a body region overlying the drift region and doped a second conductivity type;

    a conductive gate electrode extending from a principal surface of the body region through the body region;

    a source region doped the first conductivity type and formed in the body region, and extending to the principal surface thereof; and

    a buried layer region doped the first conductivity type to a concentration greater than that of the substrate region, and extending at least in part into the drift region and adjacent the substrate region.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×