Variable inductance element using an inductor conductor
First Claim
1. A variable inductance element comprising:
- at least one inductor conductor having a predetermined shape,at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, anda separate switch than the at least one switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state.
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Accused Products
Abstract
A variable inductance element comprising an inductor conductor 10 having a predetermined shape formed on an insulation layer 40 on the surface of a semiconductor substrate 42, switches 16 and 24 for shorting portions of the inductor conductor 10, and input/output terminals 12 and 14 provided at the respective ends of the inductor conductor 10. When switches 16 and/or 24 is in the on state, the function as an inductor having a smaller inductance than the overall inductor conductor 10 is obtained. The inductance of this variable inductance element can be changed by external control, while manufacturing is easy and formation in a unitized manner with an integrated circuit or other semiconductor device is enabled.
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Citations
42 Claims
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1. A variable inductance element comprising:
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at least one inductor conductor having a predetermined shape, at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, and a separate switch than the at least one switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A variable inductance element comprising:
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at least one inductor conductor having a predetermined shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, said at least one inductor conductor and said at least one switch being formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A variable inductance element comprising:
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at least one inductor conductor having a predetermined spiral shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, wherein said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor. - View Dependent Claims (30, 31)
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32. A variable inductance element comprising:
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at least one inductor conductor having a predetermined meander shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, wherein said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor. - View Dependent Claims (33, 34)
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35. A variable inductance element comprising:
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at least one inductor conductor having a predetermined shape, at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state wherein said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, and two input/output terminals provided at respective ends of said at least one inductor conductor, wherein by operation of said switch a length of said at least one inductor inductor between said two input/output terminals is changed to vary the inductance between said two input/output terminals, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor. - View Dependent Claims (36)
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37. A variable inductance element comprising:
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at least one inductor conductor having a predetermined shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, wherein said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor. - View Dependent Claims (38)
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39. A variable inductance element comprising:
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at least one inductor conductor having a spiral shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor.
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40. A variable inductance element comprising:
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at least one inductor conductor having a meander shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor.
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41. A variable inductance element comprising:
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at least one inductor conductor having a predetermined shape; at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate; and two input/output terminals provided at respective ends of said at least one inductor conductor, wherein by operation of said switch a length of said at least one inductor conductor between said two input/output terminals is changed to vary the inductance between said two input/output terminals, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor.
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42. A variable inductance element comprising:
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at least one inductor conductor having a predetermined shape, and at least one switch functioning to separate and connect portions of said at least one inductor conductor, said at least one inductor conductor used one of independently and in combination with other inductor conductors, wherein said at least one switch includes a switch for cutting off an unnecessary closed loop produced by said at least one inductor conductor according to a switch operating state, said at least one inductor conductor and said at least one switch are formed on a semiconductor substrate, wherein said at least one switch comprises a transmission gate having an n channel transistor and a p channel transistor connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as a source and a drain of each of said n channel and p channel transistors are respectively connected to different portions of said at least one inductor conductor.
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Specification