Method for producing high efficiency light-emitting diodes and resulting diode structures
First Claim
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1. A method of producing light emitting diodes from silicon carbide with increased external efficiency, the method comprising:
- directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light has a wavelength for which the energy equivalent is equal to or greater than the bandgap of the silicon carbide and is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and
dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion.
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Abstract
A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also disclosed.
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Citations
30 Claims
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1. A method of producing light emitting diodes from silicon carbide with increased external efficiency, the method comprising:
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directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light has a wavelength for which the energy equivalent is equal to or greater than the bandgap of the silicon carbide and is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of producing light emitting diodes from silicon carbide with increased external efficiency, the method comprising:
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directing a beam of laser light at one surface of a wafer formed of a plurality of adjacent silicon carbide light emitting diode precursors, and in which the laser light has a wavelength for which the energy equivalent is equal to or greater than the bandgap of the silicon carbide and is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; directing the laser light along the surface of the wafer in a pattern that forms a plurality of trenches between the adjacent light emitting diode precursors; and dry etching the wafer to remove by-products generated when the laser beam cuts the wafer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of producing light emitting diodes from silicon carbide with increased external efficiency, the method comprising:
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directing a beam of laser light at one surface of a wafer formed of a plurality of adjacent gallium nitride light emitting diode precursors, and in which the laser light has a wavelength for which the energy equivalent is equal to or greater than the bandgap of the gallium nitride and is sufficient to vaporize the gallium nitride that it strikes to thereby define a cut in the gallium nitride; directing the laser light along the surface of the wafer in a pattern that forms a plurality of trenches between the adjacent light emitting diode precursors; and dry etching the wafer to remove vaporized by-products generated when the laser beam cuts the wafer. - View Dependent Claims (26, 27, 28, 29, 30)
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Specification