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Method for producing high efficiency light-emitting diodes and resulting diode structures

  • US 5,631,190 A
  • Filed: 10/07/1994
  • Issued: 05/20/1997
  • Est. Priority Date: 10/07/1994
  • Status: Expired due to Term
First Claim
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1. A method of producing light emitting diodes from silicon carbide with increased external efficiency, the method comprising:

  • directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light has a wavelength for which the energy equivalent is equal to or greater than the bandgap of the silicon carbide and is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and

    dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion.

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