Capacitive semiconductor pressure sensor
First Claim
Patent Images
1. A semiconductor component pressure sensor, comprising:
- an electrically conductive region;
a layer over the electrically conductive region defining a cavity;
an electrically conductive membrane layer overlying the cavity;
recesses in the membrane layer above the cavity;
a closure layer applied on the membrane layer;
said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer;
electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance; and
a material of the closure layer being introduced into said recesses.
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Abstract
A micromechanically manufacturable pressure sensor has a cavity produced in an auxiliary layer that is covered with a membrane layer, the cavity is produced via recesses in the membrane layer. These recesses are subsequently closed by portions of a closure layer. Further layers can be applied on the closure layer. Portions of the further layers and closure layer are removed above the membrane layer.
27 Citations
9 Claims
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1. A semiconductor component pressure sensor, comprising:
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an electrically conductive region; a layer over the electrically conductive region defining a cavity; an electrically conductive membrane layer overlying the cavity; recesses in the membrane layer above the cavity; a closure layer applied on the membrane layer; said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer; electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance; and a material of the closure layer being introduced into said recesses.
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2. A semiconductor component pressure sensor, comprising:
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an electrically conductive region; a layer over the electrically conductive region defining a cavity; an electrically conductive membrane layer overlying the cavity; recesses in the membrane layer above the cavity; a closure layer applied on the membrane layer; said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer; electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance; and an opening through said closure layer to said membrane layer for permitting said pressure to be exerted directly on said membrane layer. - View Dependent Claims (3, 4, 5, 6)
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7. A semiconductor component pressure sensor, comprising:
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an electrically conductive region; a layer over the electrically conductive region defining a cavity an electrically conductive membrane layer overlying the cavity; recesses in the membrane layer above the cavity; a closure layer applied on the membrane layer; said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer; electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance; and said electrically conductive membrane layer comprising polysilicon.
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8. A semiconductor component pressure sensor, comprising:
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an electrically conductive region; a layer over the electrically conductive region defining a cavity; an electrically conductive membrane layer overlying the cavity; recesses in the membrane layer above the cavity; a closure layer applied on the membrane layer; said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer; electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance; and said membrane layer comprising metal.
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9. A semiconductor component pressure sensor, comprising:
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an electrically conductive region; a layer over the electrically conductive region defining a cavity; an electrically conductive membrane layer overlying the cavity; recesses in the membrane layer above the cavity; a closure layer applied on the membrane layer, a material of the closure layer being introduced into the recesses to close them off; said membrane being deformable so that given a change of pressure within a predetermined interval at a side of the membrane facing away from the cavity, the membrane can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer; electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance; and an opening through said closure layer down to said membrane layer for permitting said pressure to be exerted on said membrane layer.
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Specification