Apparatus and method for optically transmitting electrical signals in the 20-300 gigahertz frequency range

• US 5,631,916 A
• Filed: 05/01/1995
• Issued: 05/20/1997
• Est. Priority Date: 05/01/1995
• Status: Expired due to Term

• Current Assignee: Tyco Electronics Services GmbH (TE Connectivity Ltd. (United Kingdom))
• Original Assignee: LGC Wireless Incorporated (TE Connectivity Limited)
• Inventors: Georges, John B., Lau, Kam Y.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/432,452
• Time in Patent Office: 750 Days
• Field of Search: 372/26, 372/28
• US Class Current: 372/28
• CPC Class Codes: H01S 5/06213 Amplitude modulation
• CPC Class Codes: H01S 5/06226 Modulation at ultra-high frequencies
• CPC Class Codes: H01S 5/0625 in multi-section lasers
• CPC Class Codes: H01S 5/065 Mode locking; Mode suppression; Mode selection ; Self pulsating
• CPC Class Codes: H04B 10/504 using direct modulation

Abstract

The invention discloses a method and an apparatus for optically transmitting a narrow-band optical signal beam having a sub-carrier frequency in the 20 to 300 GHz range. The apparatus has a semiconductor laser with a lasing cavity of length L. The length L preferably ranges from less than 1 mm to 10 mm, thereby defining the round-trip resonance frequency according to the following equation c/2 nL. The apparatus has a signal source for generating an electrical modulating signal having a modulation frequency contained in a narrow band containing the round-trip resonance frequency. An in-coupling means delivers the electrical modulating signal to the semiconductor laser which produces a sub-carrier modulated signal beam whose sub-carrier modulation frequency lies within a response band and corresponds to the modulation frequency. The apparatus further includes a biasing device for providing a biasing voltage for tuning the response band and the sub-carrier modulated signal beam. According to the method of the invention the biasing voltage is used to set the width of the response band and to set a phase shift in the sub-carrier modulated optical signal beam. Varying the biasing voltage thus allows to phase-modulate the sub-carrier modulated optical signal beam.

Claims

1. An apparatus for optically transmitting a narrow-band electrical signal having a frequency in the 20 to 300 GHz range, said apparatus comprising:

a) a semiconductor laser with a lasing cavity having a length L for sustaining a laser beam, said lasing cavity having a round-trip distance defined by twice said length L, said round-trip distance corresponding to a round-trip resonance frequency;

b) a signal source for generating an electrical modulating signal having a modulation frequency contained in a narrow band, said narrow band comprising said round-trip resonance frequency;

c) an in-coupling means mounted on said semiconductor laser for delivering said electrical modulating signal to said semiconductor laser, thereby producing a sub-carrier modulated optical signal beam whose sub-carrier modulation frequency is comprised within a response band and corresponds approximately to said modulation frequency.

2. The apparatus of claim 1, further comprising an impedance matching means connected between said signal source and said in-coupling means for improving the in-coupling efficiency of said modulating signal into said semiconductor laser.

3. The apparatus of claim 2, wherein said impedance matching means is a microstrip impedance matching circuit.

4. The apparatus of claim 1, wherein said length L ranges from less than 1 millimeter to 10 millimeters, thereby defining said round-trip resonance frequency according to the following equation:

##EQU3## wherein c is the speed of light and n is the refractive index of the material making up said semiconductor laser.

5. The apparatus of claim 1, further comprising a biasing means, said biasing means being connected to said in-coupling means for providing a biasing voltage for tuning said response band and said sub-carrier modulated optical signal beam.

6. The apparatus of claim 5, wherein said in-coupling means comprises a first contact and a second contact, said signal source being connected to said first contact and said biasing means being connected to said second contact.

7. The apparatus of claim 5, wherein said in-coupling means comprises a contact, said signal source and said biasing means being connected to said contact.

8. The apparatus of claim 1, further comprising:

a) an optical coupling element for extracting said sub-carrier modulated optical signal beam from said semiconductor laser; and

b) an optical fiber connected to said optical coupling element for receiving and transmitting said sub-carrier modulated optical signal beam.

9. The apparatus of claim 8 wherein said semiconductor laser has an output facet, said optical fiber has an in-coupling face, and said optical coupling element is an optical material located between said output facet and said in-coupling face, such that said sub-carrier modulated optical signal beam exiting through said output facet passes through said optical material to said in-coupling face.

10. The apparatus of claim 9 wherein said in-coupling face of said optical fiber is positioned at a Brewster angle to said output facet, such that said sub-carrier modulated optical signal beam is efficiently in-coupled into said optical fiber.

11. The apparatus of claim 1, wherein said semiconductor laser is selected from the group containing a Fabry-Perot laser, a Distributed Feedback laser, and a Distributed Bragg Reflector laser.

12. A method for optically transmitting a narrow-band electrical signal having a frequency in the 20 to 300 GHz range using a semiconductor laser with a lasing cavity, said method comprising the following steps:

a) cleaving said semiconductor laser such that said lasing cavity has a length L, thereby setting a round-trip distance of said lasing cavity to twice said length L, said round-trip distance corresponding to a round-trip resonance frequency;

b) generating an electrical modulating signal using a signal source, said electrical modulating signal having a modulation frequency contained in a narrow band, said narrow band comprising said round-trip resonance frequency;

c) in-coupling said electrical modulating signal into said semiconductor laser using an in-coupling means mounted on said semiconductor laser, thereby producing a sub-carrier modulated optical signal beam whose sub-carrier modulation frequency is comprised within a response band and corresponds approximately to said modulation frequency.

13. The method of claim 12, further comprising the step of biasing said semiconductor laser by applying a biasing voltage to said in-coupling means.

14. The method of claim 13, wherein said biasing voltage is used to set the width of said response band.

15. The method of claim 13, wherein said biasing voltage is used to set a phase shift in said sub-carrier modulated signal beam.

16. The method of claim 15, wherein said phase shift is varied by changing said biasing voltage to phase-modulate said sub-carrier modulated signal beam.

17. The method of claim 12, wherein said sub-carrier modulated optical signal beam is extracted from said lasing cavity and in-coupled into an optical fiber.