Thin layer composite unimorph ferroelectric driver and sensor
First Claim
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1. A method for producing ferroelectric devices, comprising:
- selecting a mold for the device;
placing a prestress layer on the mold;
placing a ferroelectric layer on the prestress layer to create layer structure;
heating the prestress and ferroelectric layers; and
cooling the prestress and ferroelectric layers whereby the heating and cooling steps induce a prestress into the layered structure.
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Abstract
A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.
217 Citations
8 Claims
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1. A method for producing ferroelectric devices, comprising:
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selecting a mold for the device; placing a prestress layer on the mold; placing a ferroelectric layer on the prestress layer to create layer structure; heating the prestress and ferroelectric layers; and cooling the prestress and ferroelectric layers whereby the heating and cooling steps induce a prestress into the layered structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification