Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions

• US 5,633,036 A
• Filed: 04/21/1995
• Issued: 05/27/1997
• Est. Priority Date: 04/21/1995
• Status: Expired due to Fees

• Current Assignee: Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Seebauer, Edmund G., Mendicino, Michael A.
• Primary Examiner(s): LUSIGNAN, MICHAEL R
• Application Number:
  US08/426,508
• Time in Patent Office: 767 Days
• Field of Search: 427/248.1, 427/255.1, 427/255.2, 427/126.1, 427/294, 437/228, 208/192, 208/25, 216/37
• US Class Current: 427/126.5
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence

Abstract

The present invention concerns a completely selective and efficient method for chemical vapor deposition of titanium disilicide onto silicon regions of a silicon substrate including silicon dioxide regions. According to the method of the present invention a silicon substrate is heated to a low temperature. Silicon nucleation is induced by the introduction of a silicon precursor, such as silane. Silicon nucleates primarily on the silicon regions, with minimal nucleation on silicon dioxide regions. The silicon nuclei are then converted to titanium disilicide by the low pressure introduction of titanium tetrachloride with or without continued supply of silane. Etching, preferably using chlorine gas, is used to remove the titanium disilicide formed from conversion. The etching leaves the silicon dioxide regions completely intact, while the silicon region is slightly textured. Steady state growth is then induced on the silicon region with complete selectivity by the introduction of silane and titanium tetrachloride under low pressure and temperature conditions. During the steady state growth minimal silicon is consumed from the underlying silicon region.

Claims

1. A process for selective chemical vapor deposition of titanium disilicide onto a silicon substrate having a silicon region and a silicon dioxide region comprising the steps of:

heating the silicon substrate in a growth reactor to a low growth temperature of approximately 750°

C. or less;

forming silicon nuclei primarily on the silicon region through introduction of a silicon source gas at a low supply pressure in the approximate range of 0.5 to 5 mTorr;

converting said silicon nuclei to titanium disilicide;

etching the titanium disilicide formed from said convening to remove any titanium disilicide formed upon the silicon dioxide region and the silicon region, and to prepare the silicon region for growth of titanium disilicide; and

selectively growing a layer of titanium disilicide on the silicon region through introduction of said silicon source .gas at said low supply pressure along with a titanium source gas, wherein the pressure ratio of said silicon source gas to said titanium source gas is in the approximate range of 20-100, and said selective growing is accomplished with a silicon substrate consumption rate of approximately 10% or less.

2. A process for selective chemical vapor deposition according to claim 1, wherein said silicon gas source is silane.

3. A process for selective chemical vapor deposition according to claim 2, wherein:

said step of converting is carried out through the introduction of titanium tetrachloride at a pressure in the approximate range of 0.02 mTorr to 2 mTorr.

4. A process for selective chemical vapor deposition according to claim 3, wherein:

said step of etching is carried out through the introduction of chlorine gas, the substrate temperature being reduced from said low growth temperature, and

said substrate is returned to said low growth temperature prior to said step of selectively growing.

5. A process for selective chemical vapor deposition according to claim 3, wherein:

said step of etching is carried out through the introduction of hydrogen chloride, the substrate temperature being reduced from said low growth temperature, and

said substrate is returned to said low growth temperature prior to said step of selectively growing.

6. A process for selective chemical vapor deposition according to claim 4, wherein said titanium source gas is titanium tetrachloride:

7. A process for chemical vapor deposition according to claim 6, wherein said titanium tetrachloride pressure is below approximately 1 mTorr during said step of selectively growing.

8. A process for chemical vapor deposition according to claim 7, wherein:

said low growth temperature is in the approximate range of 650°

C. to 750°

C.

9. A process for chemical vapor deposition according to claim 1, further comprising the steps of:

pumping away gases in said growth reactor subsequent to said step of selective growing; and

cooling said substrate subsequent to said step of pumping away.

10. A process for selective chemical vapor deposition of titanium disilicide onto a silicon substrate having a silicon region and a silicon dioxide region comprising the steps of:

preparing the silicon region through silicon nucleation and subsequent removal of nuclei from the silicon dioxide region; and

selectively growing a layer of titanium disilicide on the silicon region with a silicon substrate consumption rate of approximately 10% of less after said removal by introducing silane and titanium tetrachloride into the growth reactor at low temperature of approximately 750°

C. or less, wherein the source pressure of the titanium tetrachloride is below approximately 1 mTorr and the pressure ratio of silane to titanium tetrachloride is in the approximate range of 20-100.

11. A process for selective chemical vapor deposition according to claim 10, wherein:

the silicon substrate is maintained at a temperature in the approximate range of 650°

C. to 750°

C. during said step of selectively growing.

12. A process for selective chemical vapor deposition according to claim 11, wherein:

said step of selective growing deposits titanium disilicide at a rate exceeding approximately 1000 Å

per minute.