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Method for detecting wafer defects

  • US 5,633,173 A
  • Filed: 07/13/1995
  • Issued: 05/27/1997
  • Est. Priority Date: 07/14/1994
  • Status: Expired due to Term
First Claim
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1. A method for detecting wafer defects, comprising the steps of:

  • forming dummy dies at edge portions of a flat wafer containing no pattern die;

    performing a first step of inspecting defects on a surface of the wafer containing no pattern die;

    determining the coordinates of the defects, using said dummy dies as reference marks;

    performing a pattern die forming step;

    performing a second step of inspecting defects on a surface of the wafer after said die forming step; and

    comparing the defect coordinates and characteristics from said first and said second defect inspecting steps.

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