Planarization of insulation film using low wettingness surface

• US 5,633,208 A
• Filed: 12/01/1994
• Issued: 05/27/1997
• Est. Priority Date: 12/01/1993
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Ishikawa, Hiraku
• Primary Examiner(s): CHU, JOHN S Y
• Application Number:
  US08/352,155
• Time in Patent Office: 908 Days
• Field of Search: 437/228, 437/231, 437/238, 437/195
• US Class Current: 438/699
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A planarization method comprises forming on an uneven surface an silicon oxide film having a low wettingness at least on its surface. The low wettingness of the silicon oxide film is obtained by increasing the silicon/oxygen atom ratio by means of argon sputtering or plasma CVD method. A silica solution is subsequently spin-coated onto the silicon oxide film. Since the surface of the silicon oxide film has a low wettingness, more of the coated silica solution stands on recessed portions than on raised portions, resulting in a flat surface of the coated solution. After the coated silica solution has been hardened, etching-back can be carried out until the coated silica solution is completely removed, thereby achieving the planarized surface of the silicon oxide film.

Claims

1. A method for planarizing an insulation film formed on an uneven surface, comprising:

a first step of forming said insulation film on said uneven surface, said insulation film having a lowered wettingness at least on a surface of said insulation film;

a second step of coating a hydrophilic hardenable solution on said insulation film formed by the first step;

a third step of hardening said hydrophilic hardenable solution to form a hardened film on said insulation film; and

a fourth step of etching back said hardened film toward said insulation film.

2. The method according to claim 1, wherein said first step comprises:

forming said insulation film on said uneven surface; and

changing a material composition of said insulation film on its surface to lower said wettingness.

3. The method according to claim 1, wherein the first step comprises depositing said insulation film having a material composition serving to lower said wettingness.

4. The method according to claim 1, wherein the second step comprises spin-coating said hydrophilic hardenable solution.

5. The method according to claim 1, wherein said insulation film has a thickness greater than an elevation of said uneven surface.

6. A method for planarizing an insulation film formed on an uneven surface, comprising:

a first step of forming a silicon oxide film on said uneven surface, said silicon oxide film having a lowered wettingness at least on the surface of said silicon oxide film;

a second step of coating a hydrophilic silica solution on said silicon oxide film;

a third step of hardening said silica solution to form a hardened film on said silicon oxide film; and

a fourth step of etching back said hardened film toward said silicon oxide film until said hardened film is completely removed.

7. The method according to claim 6, wherein said silicon oxide film formed by said first step has a silicon/oxygen atom ratio greater than 0.5 at least on said surface of said silicon oxide film.

8. The method according to claim 7, wherein said first step comprises:

forming a silicon dioxide film on said uneven surface; and

sputtering a rare gas on said silicon dioxide film.

9. The method according to claim 7, wherein said first step comprises depositing said silicon oxide film using a chemical vapor deposition process in which a silane/oxygen gas flow rate ratio is set to more than 0.67.

10. The method according to claim 6, wherein said second step comprises spin-coating said silica solution.

11. The method according to claim 6, wherein said silicon oxide film has a thickness greater than an elevation of said uneven surface.