Cantilever pressure transducer

• US 5,633,552 A
• Filed: 06/10/1994
• Issued: 05/27/1997
• Est. Priority Date: 06/04/1993
• Status: Expired due to Fees

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Lee, Seung S., Pisano, Albert P., White, Richard M.
• Primary Examiner(s): Dougherty, Thomas M.
• Application Number:
  US08/258,046
• Time in Patent Office: 1,082 Days
• Field of Search: 310/309, 310/311, 310/328, 310/331, 310/332, 29/25.35
• US Class Current: 310/311
• CPC Class Codes: A61B 18/14 Probes or electrodes therefor
• CPC Class Codes: A61B 18/1402 Probes for open surgery
• CPC Class Codes: A61B 2017/00345 Micromachines, nanomachines, microsystems
• CPC Class Codes: A61B 2017/0088 ceramic
• CPC Class Codes: A61B 2018/00107 Coatings on the energy applicator
• CPC Class Codes: A61B 2018/00119 with metal oxide nitride
• CPC Class Codes: B06B 1/0688 with foil-type piezoelectric elements, e.g. PVDF
• CPC Class Codes: H04R 17/00 Piezoelectric transducers; Electrostrictive transducers piezoelectric or electrostrictive elements in general H10N30/00; details of piezoelectric or electrostrictive motors, generators or positioners H10N30/00
• CPC Class Codes: H04R 17/005 using a piezoelectric polymer
• CPC Class Codes: H04R 17/08 signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
• CPC Class Codes: H10N 30/2042 Cantilevers, i.e. having one fixed end

Abstract

Micromachined cantilever pressure transducers, which work both as microphones and as microspeakers, are disclosed. These devices are made possible by novel methods for producing flat, thin film multilayer or polymeric cantilevers.

Claims

1. A micromechanical device comprising:

a frame having an opening;

at least one cantilever structure attached to said frame over a portion of a perimeter of said opening and covering a majority of said opening; and

said cantilever structure including three adjacent sublayers designated first, second and third such that said second sublayer is adjacent to said first and third sublayers, said first and third sublayers formed of substantially the same first material and having about the same average stress, and said second layer formed of a second material and having a minimum stress and a maximum stress, the difference between said maximum stress and said minimum stress being less than the magnitude of the average stress of said first sublayer.

2. The device of claim 1 wherein, when said cantilever structure is in equilibrium, its deflection out of the plane of said opening is less than about 50 μ

m.

3. The device of claim 2 wherein said cantilever structure includes silicon nitride.

4. The device of claim 1 further including a transducer, said transducer overlapping said cantilever structure and not overlapping said substrate.

5. The device of claim 4 wherein said transducer is from the group consisting of piezoelectric, piezoresistive, capacitive, magnetostrictive and thermal transducers.

6. The device of claim 4 wherein said transducer includes a zinc oxide thin film.

7. The device of claim 1 wherein said first and third sublayers have opposite stress gradients.

8. The device of claim 7 further including a transducer, said transducer overlapping said cantilever structure and not overlapping said substrate.

9. The device of claim 8 wherein said transducer is from the group consisting of piezoelectric, piezoresistive, capacitive, magnetostrictive and thermal transducers.

10. The device of claim 8 wherein said transducer includes a zinc oxide thin film.

11. The device of claim 1 wherein an average stress of said second sublayer is less than the average stress of said first layer.

12. The device of claim 1 wherein said first and second materials include silicon.

13. The device of claim 1 wherein said first and second material include silicon nitride.

29. The device of claim 2 wherein said frame and said cantilever structure include a polymeric material.

14. A micromechanical device, comprising:

a substrate having first and second surfaces, and a cavity with an opening at said first surface;

at least one multilayer cantilever structure attached to said first surface of said substrate over a portion of a perimeter of said opening and covering a majority of said opening; and

wherein said cantilever structure includes three adjacent sublayers designated first, second and third such that said second sublayer is adjacent to said first and third sublayers, said first and third sublayers having about the same average stress, said second sublayer having a maximum stress and a minimum stress, compressive and tensile stresses considered to have opposite sign, and the magnitude of the difference between said maximum stress and said minimum stress being less than the magnitude of the average stress of said first sublayer, said first, second and third sublayers including silicon nitride.

15. A micromechanical device comprising:

a substrate having first and second surfaces, and a cavity with an opening at said first surface;

at least one multilayer cantilever structure attached to said first surface of said substrate over a portion of a perimeter of said opening and covering a majority of said opening; and

wherein said cantilever structure includes three adjacent sublayers designated first, second and third such that said second sublayer is adjacent to said first and third sublayers, said first and third sublayers having about the same average stress, said second sublayer having a maximum stress and a minimum stress, compressive and tensile stresses considered to have opposite sign, the magnitude of the difference between said maximum stress and said minimum stress being less than the magnitude of the average stress of said first sublayer, and said first and third sublayers having opposite stress gradients, said first, second and third sublayers including silicon nitride.

16. A micromechanical device, comprising:

a substrate having first and second surfaces, and a cavity with an opening at said first surface;

at least one multilayer cantilever structure attached to said first surface of said substrate over a portion of a perimeter of said opening and covering a majority of said opening; and

wherein said cantilever structure includes three adjacent sublayers designated first, second and third such that said second sublayer is adjacent to said first and third sublayers, said first and third sublayers having about the same average stress, said second sublayer having a maximum stress and a minimum stress, compressive and tensile stresses considered to have opposite sign, the magnitude of the difference between said maximum stress and minimum stress being less than the magnitude of the average stress of said first sublayer, and an average stress of said second sublayer is less than the average stress of said first sublayer, said first, second and third sublayers including silicon nitride.

17. A method for fabrication of a polymeric cantilever structure, comprising:

providing a first mold element having features raised above a first flat surface;

coating said first surface with a polymer precursor;

placing a second mold element with a second flat surface parallel to the first surface and in contact with the raised features; and

polymerizing said polymer precursor.

18. A method for fabrication of a thin film cantilever structure, comprising:

providing an article comprising a substantially planar first thin film, said thin film having first and second exposed surfaces;

growing second and third thin films on said first and second surfaces, respectively, to form a thin film multilayer; and

etching at least one slit through at least part of the thin film multilayer to define at least one multilayer thin film cantilever.

19. The method of claim 18 further including:

growing a sacrificial backing layer before etching said slit; and

etching said sacrificial backing layer after etching said slit; and

wherein

said sacrificial backing layer is not etched when said slit is etched.

20. The method of claim 18 wherein said second and third films are grown at the same time.

21. The method of claim 20 wherein said second and third films are grown using chemical vapor deposition.

22. The method of claim 21 wherein said second and third films include silicon nitride.

23. The method of claim 18 wherein said first film includes silicon nitride grown on a silicon dioxide-coated substrate by chemical vapor deposition in an atmosphere with a ratio of silicon atomic content to nitrogen atomic content of about 6:

1.

24. The method of claim 18 further including a step of growing fourth and fifth thin films on said second and third thin films, respectively before the etching of said slit.

25. The method of claim 24 further including:

growing a sacrificial backing layer before etching said slit; and

etching said sacrificial backing layer after etching said slit; and

wherein

said sacrificial backing layer is not etched when said slit is etched.

26. The method of claim 24 wherein said fourth and fifth films are grown at the same time.

27. The method of claim 26 wherein said fourth and fifth films are grown using chemical vapor deposition.

28. The method of claim 27 wherein said fourth and fifth films include silicon dioxide.