Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate

• US 5,635,083 A
• Filed: 06/06/1995
• Issued: 06/03/1997
• Est. Priority Date: 08/06/1993
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Prince, Matthew J., Breivogel, Joseph R., Barns, Christopher E.
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US08/467,546
• Time in Patent Office: 728 Days
• Field of Search: 156/636.1, 156/645.1, 216/88, 216/89, 451/289, 451/287, 451/288, 451/388, 277/152
• US Class Current: 216/88
• CPC Class Codes: B24B 37/30 for single side lapping of plane surfaces
• CPC Class Codes: B24B 37/32 Retaining rings
• CPC Class Codes: B24B 49/16 taking regard of the load
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]

Abstract

A novel method and apparatus for uniformly polishing thin films formed on a semiconductor substrate. A substrate is placed face down on a moving polishing pad so that the thin film to be polished is placed in direct contact with the moving polishing pad. The substrate is forcibly pressed against the polishing pad with pneumatic or hydraulic pressure applied to the backside of the substrate during polishing. Additionally, a wear ring is placed on the polishing pad around and adjacent to the substrate and forcibly pressed onto the polishing pad with a downward pressure from a second source so that the wear ring is coplanar with the substrate in order to eliminate edge rounding effects.

Claims

1. A method of polishing a substrate comprising the steps of:

placing a substrate on a polishing pad;

moving said polishing pad;

pressing said substrate against said moving polishing pad with a carrier, wherein said carrier presses said substrate against said moving polishing pad with a pneumatic pressure applied directly to a portion of the backside of said substrate; and

pressing a lip seal against the outer edge of the backside of said substrate and against said carrier with said pneumatic pressure to form a leak tight seal between said substrate and said carrier.

2. The method of claim 1 wherein said pneumatic pressure is applied directly to a substantial portion of the backside of said substrate.

3. The method of claim 1 further comprising the step of rotating said substrate while polishing said substrate.

4. The method of claim 1 wherein said lip seal is resilient.