Real-time multi-zone semiconductor wafer temperature and process uniformity control system

• US 5,635,409 A
• Filed: 10/28/1994
• Issued: 06/03/1997
• Est. Priority Date: 05/20/1991
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Moslehi, Mehrdad M.
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): BILODEAU, THOMA
• Application Number:
  US08/331,309
• Time in Patent Office: 949 Days
• Field of Search: 437/8, 437/247, 437/7, 250/341.1, 250/341.2, 250/341.4, 250/341.5, 250/341.6, 250/341.7, 250/341.8, 250/370.15, 374/120, 374/124, 374/128, 374/129, 374/137
• US Class Current: 438/7
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements. A scatter module (116) also provides input to process control circuitry (150) for real-time emissivity compensation of the pyrometry-based temperature measurements of semiconductor wafer (60).

Claims

1. A method for real-time multi-point semiconductor wafer temperature and process uniformity control, comprising the steps of:

selectively, independently and controllably heating segments of the semiconductor wafer;

independently performing temperature measurements on a plurality of points of the semiconductor wafer;

receiving said temperature measurements and selectively controlling the temperature of the semiconductor wafer to maintain uniformity in said temperature measurements;

said step of selectively controlling the temperature of the semiconductor wafer including heating the semiconductor wafer by directing and reflecting optical energy into a plurality of concentric circular zones, said concentric zones being substantially circularly continuous and sufficiently dose to one another to provide a substantially radially continuous flow of optical energy.

2. The method of claim 1, further comprising the step of producing said optical energy with a multi-zone illuminator module having a housing diameter and active optical source diameter larger than the diameter of semiconductor wafer.

4. The method of claim 1, further comprising the step of providing an approximately continuous circular optical flux from each of said zones at the semiconductor wafer surface using a plurality of point-source lamps associated within each of said circular zones and a single point-source lamp associated with the central zone.

5. The method of claim 1, further comprising the step of using a lamp module comprising two concentric circular zones plus a concentric single-lamp central zone with independent power control capabilities to produce said optical energy.

6. The method of claim 5, wherein the step of using three circular zones comprises the step of directing an outer circular zone of 24 point-source lamps, a middle circular zone of 12 point-source lamps, and a center zone of 1 point-source lamp to produce said optical energy.

7. The method of claim 6, further comprising the step of independently and adjustably providing electrical power to each of said lamp zones.

8. The method of claim 6, further comprising the step of balancing the electrical power distribution to each of said lamps.

3. A method for real-time multi-point semiconductor wafer temperature and process uniformity control, comprising the steps of:

selectively, independently and controllably heating segments of the semiconductor wafer;

independently performing temperature measurements on a plurality of points of the semiconductor wafer;

receiving said temperature measurements and selectively controlling the temperature of the semiconductor wafer to maintain uniformity in said temperature measurements;

said step of independently performing temperature measurements including sensing the semiconductor temperature using a pyrometer, said pyrometer having a plurality of fiber-optic light pipes for communicating temperature-related measurements.

9. A method for real-time multi-point semiconductor wafer temperature and process uniformity control, comprising the steps of:

selectively, independently and controllably heating segments of the semiconductor wafer;

independently performing temperature measurements on a plurality of points of the semiconductor wafer;

receiving said temperature measurements and selectively controlling the temperature of the semiconductor wafer to maintain uniformity in said temperature measurements;

said step of independently performing temperature measurements including making real-time, non-invasive, in-situ temperature measurements of the semiconductor wafer by directing a plurality of incident coherent beams of optical energy to the surface of the semiconductor wafer, collecting a plurality of reflected coherent beams of optical energy resulting from the reflection of said plurality of incident coherent beams from the semiconductor wafer, collecting incoherent radiant energy emitted from a plurality of points on a semiconductor wafer, calculating temperature values for the semiconductor wafer as a function of said plurality of incident and reflected coherent beams and said incoherent radiant energy, and associating each of said plurality of incident coherent beams with the reflected coherent beam to yield a beam pair, and further associating each beam pair with the incoherent radiant energy collected from the semi conductor wafer to yield a temperature value for each respective probed point of the semiconductor wafer.

10. A method for real-time multi-point semiconductor wafer temperature and process uniformity control, comprising the steps of:

selectively, independently and controllably heating segments of the semiconductor wafer;

independently performing temperature measurements on a plurality of points of the semiconductor wafer;

receiving said temperature measurements and selectively controlling the temperature of the semiconductor wafer to maintain uniformity in said temperature measurements; and

steps for diagnosis and prognosis of semiconductor wafer fabrication processes, the steps for diagnosis and prognosis comprising;

directing coherent electromagnetic energy in the direction of a semiconductor wafer;

measuring the total amount of electromagnetic energy reflected from said semiconductor wafer; and

comparing said total reflected electromagnetic energy to a reference value, said reference value comprising an expected value for reflected electromagnetic energy for a given semiconductor wafer surface condition.

11. The method of claim 10, further comprising the step of controlling a semiconductor wafer fabrication process in response to said comparison of said measured total reflectance value to said expected total reflectance value.

12. The method of claim 10, further comprising the steps of:

measuring the amount of electromagnetic energy coherently reflected from the semiconductor wafer;

measuring the amount of electromagnetic energy scatter reflected from the semiconductor wafer; and

determining semiconductor surface roughness as a function of said coherent electromagnetic energy, said coherently reflected electromagnetic energy, and said scatter reflected electromagnetic energy.