×

Simplified dual damascene process for multi-level metallization and interconnection structure

  • US 5,635,423 A
  • Filed: 10/11/1994
  • Issued: 06/03/1997
  • Est. Priority Date: 10/11/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming a conductive wiring and a via on a substrate comprising:

  • (a) forming a first insulative layer on said substrate;

    (b) forming an etch stop layer on said first insulative layer;

    (c) forming a second insulative layer on said etch stop layer;

    (d) forming an opening in said second insulative layer at a first location where said via is desired, said opening penetrating through said second insulative layer substantially up to but not into said etch stop layer;

    (e) forming a trench in said second insulative layer at a second location where said wiring is desired while simultaneously extending said opening through said etch stop layer and through said first insulative layer wherein said trench is wider than and entirely inclusive of said opening; and

    (f) simultaneously depositing a conductive material in said opening and in said trench so that said conductive material completely fills said opening and said trench, said trench forming said conductive wiring, said opening in said etch stop layer and said first insulative layer forming a conductive via, said conductive via providing electrical connection between said conductive wiring and said substrate.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×