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Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability

  • US 5,637,237 A
  • Filed: 06/07/1995
  • Issued: 06/10/1997
  • Est. Priority Date: 03/08/1994
  • Status: Expired due to Fees
First Claim
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1. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

  • providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber;

    heating said surface to a temperature between 290°

    C. to 310°

    C. to prevent the formation of a deposition film on said surface during etching; and

    generating a plasma for etching using a fluorocarbon gas.

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