Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability

• US 5,637,237 A
• Filed: 06/07/1995
• Issued: 06/10/1997
• Est. Priority Date: 03/08/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Oehrlein, Gottlieb S., Zhang, Ying, Haverlag, Marco, Vender, David
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US08/473,507
• Time in Patent Office: 734 Days
• Field of Search: 156/646.1, 156/643.1, 156/345, 156/662.1, 216/67, 134/1.1
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction

Abstract

The present invention relates to a method and apparatus for etching semiconductor devices where the undesirable deposition of films on the internal surfaces of the apparatus are prevented during the etching process. The system for etching devices provides an etching chamber having a deposition resistant surface, a holder for holding the device to be etched, and a heater for heating the deposition resistant surface to a temperature between 100 C to 600 C to impede the formation of films on the walls of the chamber. The etching system may further include the deposition resistant surface surrounding the holder while not interfering with the plasma used to etch the substrate.

Claims

1. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating a plasma for etching using a fluorocarbon gas.

2. The method of claim 1, wherein said surface is the wall of the etching chamber.

3. The method of claim 2, wherein said surface is coated with Al₂ O₃.

4. The method of claim 1, wherein said surface is coated with a material to reduce erosion of said surface in said plasma.

5. The method of claim 4, wherein said surface is coated with a material selected from the group consisting of Al₂ O₃, Y₂ O₃ and Sc₂ O₃.

6. The method of claim 5, wherein said surface is coated with Al₂ O₃.

8. The method of claim 1, wherein said surface is a liner disposed in the etching chamber.

7. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching;

generating a plasma comprised of a fluorocarbon gas for etching; and

etching an oxide on the substrate using the plasma.

9. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having a liner disposed in said etching chamber where said liner is coated with a material to reduce erosion of said surface in a plasma;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating said plasma for etching using a fluorocarbon gas.

10. The method of claim 9, wherein said liner is coated with Sc₂ O₃.

11. The method of claim 9, wherein said liner is coated with Y₂ O₃.

12. The method of claim 9, wherein said liner is coated with Al₂ O₃.

13. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber where said surface is coated with Y₂ O₃ to reduce erosion of said surface in a plasma;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating said plasma for etching using a fluorocarbon gas.

14. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber where said surface is coated with Sc₂ O₃ to reduce erosion of said surface in a plasma;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating said plasma for etching using a fluorocarbon gas.

15. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating a plasma for etching using a gas selected from the group consisting of CHF₃ (100%), CHF₃ /H₂ (30%) and CHF₃ /H₂ (50%).

16. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having a surface defining a wall of the etching chamber where said surface is coated with Sc₂ O₃ ;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating a plasma for etching using a fluorocarbon gas.

17. A method for impeding the deposition of undesirable films in an etching system, said method comprising the steps of:

providing an etching chamber having a surface defining a wall of the etching chamber where said surface is coated with Y₂ O₃ ;

heating said surface to a temperature between 290°

C. to 310°

C. to prevent the formation of a deposition film on said surface during etching; and

generating a plasma for etching using a fluorocarbon gas.