Method of fabricating an air-filled waveguide on a semiconductor body

• US 5,637,521 A
• Filed: 06/14/1996
• Issued: 06/10/1997
• Est. Priority Date: 06/14/1996
• Status: Expired due to Fees

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: The United States Of America As Represented By The Secretary Of The Army
• Inventors: Woolard, Dwight L., Lu, Xiaojia J., Rhodes, David L.
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/665,138
• Time in Patent Office: 361 Days
• Field of Search: 437/51, 437/789, 437/204, 437/927, 437/974, 148/DIG. 12
• US Class Current: 438/619
• CPC Class Codes: H01P 11/002 Manufacturing hollow waveguides

Abstract

A method of using layers of gold metallization and a thick film coating of photo-sensitive material to form an air-filled microwave waveguide structure on the outer surface of a semiconductor body, such as a monolithic microwave integrated circuit commonly referred to as an MMIC, so that the waveguide can be coupled to the active and passive devices of the MMIC. First, a patterned metallization layer is formed on a substrate. A mold of a waveguide is fabricated by masking and then etching another metallization layer. The mold is turned over face down on the patterned metallization layer and bonded to the patterned metallization layer, Then, any unnecessary material is etched away.

Claims

1. A method of fabricating an air-filled waveguide on a semiconductor body, comprising the steps of:

(a) forming a patterned first layer of metallization on an outer surface of a semiconductor body;

(b) fabricating a mold of a waveguide on a support member by,

(i) forming a relatively thick film coating of photo-sensitive material on said support member;

(ii) forming a mask on said coating,

(iii) forming a cavity defining said waveguide in an unmasked portion of said coating,

(iv) forming a second layer of metallization in said cavity and on said coating,

(c) turning the mold over and locating it face down on said patterned first layer of metallization;

(d) bonding said first and second layers of metallization together; and

(e) removing said support member and said thick film coating, thereby leaving an air-filled waveguide formed on the outer surface of said semiconductor body.

2. A method according to claim 1 wherein said semiconductor body comprises a monolithic microwave integrated circuit.

3. A method according to claim 2 wherein said steps (i) and (iii) of forming includes the step of photolithographically forming a negative mask of said coating and exposing said coating and mask with ultra-violet light.

4. A method according to claim 3 wherein said cavity comprises an elongated cavity having dimensions corresponding to the physical dimensions of said waveguide.

5. A method according to claim 2 wherein said thick film coating is comprised of a polymer or polyimide.

6. A method according to claim 1 wherein said first and second layers of metallization are comprised of gold.