Plasma processing apparatus adjusted for a batch-processing of a plurality of wafers with plasma gases
First Claim
1. An apparatus for a batch processing of a plurality of substrates at a time with plasma gas, comprising:
- a chamber;
a plurality of sampling stages accommodated within said chamber, said sampling stages being spaced apart from each other;
bottom electrodes being provided on said plurality of sampling stages, said bottom electrodes being spaced apart from each other, so that substrates are placed on said bottom electrodes;
the same number of top electrodes, as said bottom electrodes, being provided over a space which is positioned over said substrates, said top electrodes being positioned to make pairs with said bottom electrodes so that said substrates are positioned between said top and bottom electrodes paired respectively, each of said top electrodes being divided into a plurality of parts separated from each other by microwave radiation ports through which microwave radiates toward said substrates;
means being provided on said chamber at a level above said substrates and below said top electrodes for introducing a process gas to said space over said substrates;
means being provided on said chamber for discharging said process gas from said chamber;
means being provided over said top electrodes for radiating microwaves toward said substrates via said microwave radiation ports to excite process gasses introduced by said process gas introducing means and generate plasma gases; and
means being electrically connected to at least any of said top and bottom electrodes for applying high frequency voltages between said top and bottom electrodes at high frequencies to accelerate plasma gases for processing said substrates.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides an apparatus for a batch processing of a plurality of substrates at a time with plasma gas. The above chamber comprises the following elements. A chamber is provided for a batch processing of a plurality of substrates at a time with plasma gas. A plurality of sampling stages are accommodated within the chamber. The sampling stages are spaced apart from each other. Bottom electrodes are provided on the plurality of sampling stages. The bottom electrodes are spaced apart from each other so that substrates are placed on the bottom electrodes. The same number of top electrodes, as the bottom electrodes, are provided over a space which is positioned over the substrates. The top electrodes are positioned to make pairs with the bottom electrodes so that the substrates are positioned between the top and bottom electrodes paired respectively. Each of the top electrodes is divided into a plurality of parts separated from each other by microwave radiation ports through which microwave radiates toward the substrates. A process gas introduction section is provided on the chamber at a level above the substrates and below the top electrodes for introducing a process gas to the space over the substrates. A process gas discharging section is provided on the chamber for discharging the process gas from the chamber. A microwave radiation section is provided over the top electrodes for radiating microwaves toward the substrates via the microwave radiation ports to excite process gasses introduced by the process gas introducing section and generate plasma gases. A high frequency voltage applying section is provided to be electrically connected to at least any of the top and bottom electrodes for applying high frequency voltages between the top and bottom electrodes at high frequencies to accelerate plasma gases for processing the substrates.
-
Citations
55 Claims
-
1. An apparatus for a batch processing of a plurality of substrates at a time with plasma gas, comprising:
-
a chamber; a plurality of sampling stages accommodated within said chamber, said sampling stages being spaced apart from each other; bottom electrodes being provided on said plurality of sampling stages, said bottom electrodes being spaced apart from each other, so that substrates are placed on said bottom electrodes; the same number of top electrodes, as said bottom electrodes, being provided over a space which is positioned over said substrates, said top electrodes being positioned to make pairs with said bottom electrodes so that said substrates are positioned between said top and bottom electrodes paired respectively, each of said top electrodes being divided into a plurality of parts separated from each other by microwave radiation ports through which microwave radiates toward said substrates; means being provided on said chamber at a level above said substrates and below said top electrodes for introducing a process gas to said space over said substrates; means being provided on said chamber for discharging said process gas from said chamber; means being provided over said top electrodes for radiating microwaves toward said substrates via said microwave radiation ports to excite process gasses introduced by said process gas introducing means and generate plasma gases; and means being electrically connected to at least any of said top and bottom electrodes for applying high frequency voltages between said top and bottom electrodes at high frequencies to accelerate plasma gases for processing said substrates. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
-
-
33. An apparatus for a batch processing of a plurality of substrates at a time with plasma gas, comprising:
-
a chamber; a plurality of sampling stages accommodated within said chamber, said sampling stages being spaced apart from each other; bottom electrodes being provided on said plurality of sampling stages, said bottom electrodes being spaced apart from each other, so that substrates are placed on said bottom electrodes; the same number of top electrodes, as said bottom electrodes, being provided over a space which is positioned over said substrates, said top electrodes being positioned to make pairs with said bottom electrodes so that said substrates are positioned between said top and bottom electrodes paired respectively, each of said top electrodes being divided into a plurality of parts separated from each other by microwave radiation ports through which microwave radiates toward said substrates, said microwave radiation ports varying in opening area over positions so that intensity of microwave radiation is uniform over positions; the same number of sets of gas introduction ports being provided on said chamber at a level above said substrates and below said top electrodes for introducing process gases into said spaces over said substrates respectively, provided gas flow rates of said sets of gas introduction ports are independently controlled; at least a process gas discharge nozzle being provided at a bottom portion of said chamber and having one end connected to said bottom portion of said chamber; means being provided at an intermediate portion of said process gas discharge nozzle for adjusting a pressure of said process gas within said chamber; means being provided at the opposite end of said process gas discharge nozzle for reducing said pressure of said process gas within said chamber; the same number of dielectric plates, as said top electrodes, being provided over said top electrodes, said dielectric plates are positioned to make pairs with said top electrodes so that said dielectric plates are positioned over every said substrates; microwave guides being coupled to said dielectric plates for transmitting microwaves through said dielectric plates separately and radiating microwaves via said microwave radiation ports toward said substrates individually to excite process gasses introduced and generate plasma gases; and means being electrically connected to at least any of said top and bottom electrodes for applying individual high frequency voltages independently to a plurality of pairs of said top and bottom electrodes where voltage levels and frequencies of said individual high frequency voltages are independently controlled. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
-
Specification