Structure and method for intergrating microwave components on a substrate
First Claim
1. A method for integrating microwave system components, comprising the steps of:
- providing a silicon substrate having a resistivity greater than about 2,000 ohm-cm and less than about 7,000 ohm-cm;
forming a passive element on said silicon substrate; and
attaching a first die to said silicon substrate wherein said first die is electrically coupled to said passive element.
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Accused Products
Abstract
A component integration structure (10) for a microwave system includes a silicon substrate (12) having a resistivity greater than about 2,000 ohm-cm. A first die (14) is disposed on the silicon substrate, and a first passive element (20) is disposed on the silicon substrate and electrically coupled to the first die. In addition, a second passive element (22) and a second die (16) may be disposed on the silicon substrate. The second passive element is electrically coupled to the first passive element. An integration method sorts each of a plurality of active devices for placement on either the first die or the substrate depending on which of two different processing flows has the most favorable characteristics for fabricating each particular device.
17 Citations
15 Claims
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1. A method for integrating microwave system components, comprising the steps of:
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providing a silicon substrate having a resistivity greater than about 2,000 ohm-cm and less than about 7,000 ohm-cm; forming a passive element on said silicon substrate; and attaching a first die to said silicon substrate wherein said first die is electrically coupled to said passive element. - View Dependent Claims (2)
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3. A method for integrating microwave system components, comprising the steps of:
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providing a silicon substrate having a resistivity greater than about 2,000 ohm-cm; forming a passive element on said silicon substrate; and attaching a first die to said silicon substrate wherein said first die is electrically coupled to said passive element wherein said step of attaching includes forming bumps on said first die and bonding said bumps to said silicon substrate using a flip-chip technique. - View Dependent Claims (4, 5, 6, 7, 8)
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9. A method of integrating a microwave system including a plurality of active devices, comprising the steps of:
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providing a silicon substrate having a resistivity greater than about 2,000 ohm-cm; selecting a first manufacturing process having a first characteristic and a second manufacturing process having a second characteristic; sorting said plurality of active devices into a first group and a second group wherein said first group corresponds to said first characteristic and said second group corresponds to said second characteristic; forming a first active device from said first group on said silicon substrate; forming a second active device from said second group on a die; and attaching said die to said silicon substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification