Infrared sensor having a heat sensitive semiconductor portion that detects and absorbs infrared rays

• US 5,640,013 A
• Filed: 10/13/1995
• Issued: 06/17/1997
• Est. Priority Date: 04/07/1995
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ishikawa, Tomohiro, Ueno, Masashi, Kaneda, Osamu
• Primary Examiner(s): FIELDS, CAROLYN
• Application Number:
  US08/543,040
• Time in Patent Office: 613 Days
• Field of Search: 250/338.4, 250/370.01, 250/370.14, 250/370.08, 250/332
• US Class Current: 250/338.4
• CPC Class Codes: H01L 27/146 Imager structures

Abstract

An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.

Claims

1. An infrared sensor comprising:

a substrate;

an insulator layer formed on said substrate;

a first electrode formed on said insulator layer;

a heat-sensitive semiconductor section including a first high concentration impurity semiconductor layer formed on said first electrode, a heat-sensitive semiconductor layer formed on said first high concentration impurity layer and having an electrical resistance depending on temperature, and a second high concentration impurity semiconductor layer formed on said heat-sensitive semiconductor layer, said first and second high concentration impurity semiconductor layers having a higher absorption coefficient of infrared rays than said heat-sensitive semiconductor layer; and

a second electrode formed on the second high-concentration impurity semiconductor layer;

wherein said first and second impurity semiconductor layers are formed on the top and bottom entire surfaces of said heat-sensitive semiconductor layer.

2. The sensor according to claim 1, wherein said first and second electrodes extend on entire planes of said heat-sensitive semiconductor section.

3. The sensor according to claim 1, wherein said heat-sensitive semiconductor layer between said first and second high concentration impurity semiconductor layers extends in a plane in parallel to a plane of said substrate.

4. The sensor according to claim 3, wherein a cavity is formed below said insulator layer, and a part of the insulator layer provides the plane in parallel to the plane of said substrate.

5. The sensor according to claim 3, wherein said heat-sensitive semiconductor section further includes a diffusion prevention layer between said heat-sensitive semiconductor layer and one of said high concentration impurity semiconductor layers.

6. The sensor according to claim 1, wherein said high concentration impurity semiconductor layers in said heat-sensitive semiconductor section have conduction types different from each other.

7. The sensor according to claim 1, wherein each said high concentration impurity semiconductor layer makes ohmic contact with a respective electrode.

8. The sensor according to claim 1, wherein said heat-sensitive semiconductor section further includes a diffusion prevention layer between said heat-sensitive semiconductor layer and one of said high concentration impurity layers.

9. An infrared sensor comprising:

a substrate;

an insulator layer formed on said substrate;

a heat-sensitive semiconductor layer including a heat-sensitive semiconductor region having an electrical resistance depending on temperature, and high concentration impurity, semiconductor regions on opposite sides of the heat-sensitive semiconductor region, said heat-sensitive semiconductor region and said high concentration impurity semiconductor regions being formed on said insulator layer, said high concentration impurity semiconductor regions having a higher coefficient of absorption of infrared rays than said heat-sensitive semiconductor region; and

electrodes connected to said high-concentration impurity semiconductor regions.

10. The sensor according to claim 9, wherein said heat-sensitive semiconductor layer extends in a plane in parallel to a plane of said substrate.

11. The sensor according to claim 10, wherein a cavity is formed below said insulator layer, and a part of the insulator layer provides the plane in parallel to the plane of said substrate.

12. The sensor according to claim 9, wherein said high concentration impurity semiconductor regions in said heat-sensitive semiconductor layer have conduction types different from each other.

13. The sensor according to claim 9, wherein each high concentration impurity semiconductor region makes ohmic contact with a respective electrode.

14. The sensor according to claim 9, further comprising a diffusion prevention region between said heat-sensitive semiconductor region and one of said high concentration impurity semiconductor regions.

15. An image sensor comprising:

a plurality of infrared sensors arranged as a matrix array, each infrared sensor having an infrared detection part including a semiconductor layer having an electrical resistance depending on temperature and two high concentration impurity semiconductor regions on opposite sides of said semiconductor layer, and two electrodes connected to the two high concentration impurity semiconductor regions, said two high concentration impurity semiconductor regions having a higher coefficient of absorption of infrared rays than said semiconductor layer;

scanning lines arranged along vertical and horizontal directions, two scanning lines at each intersection being connected to the two electrodes of one of the infrared sensors;

a first circuit for selecting a scanning line along vertical direction; and

a second circuit for selecting a scanning line along horizontal direction;

wherein said high concentration impurity semiconductor regions in each sensor have conduction types different from each other.

16. The image sensor according to claim 15, wherein each high concentration impurity semiconductor region makes ohmic contact with a respective electrode to which it is connected.