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Charge transfer device with reduced parasitic capacitances for improved charge transferring

  • US 5,640,028 A
  • Filed: 11/06/1995
  • Issued: 06/17/1997
  • Est. Priority Date: 06/22/1993
  • Status: Expired due to Fees
First Claim
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1. A charge transfer device formed on a semiconductor substrate comprising:

  • charge transfer means formed on said semiconductor substrate for transferring charges,a floating gate having a floating gate diffusion layer formed on said semiconductor substrate for accumulating the charges transferred from said charge transfer means,output gate means formed between said charge transfer means and said floating gate on said semiconductor substrate, anda charge detecting circuit electrically connected to said floating gate for outputting a voltage corresponding to the amount of the charges accumulated in said floating gate diffusion layer,said output gate means having a first output gate region adjacent to said charge transfer means and a second output gate region adjacent to said floating gate diffusion layer, said first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, said second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a DC voltage being applied to said first output gate electrode, and an output voltage being applied to said second output gate electrode from said charge detecting circuit.

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