Charge transfer device with reduced parasitic capacitances for improved charge transferring

• US 5,640,028 A
• Filed: 11/06/1995
• Issued: 06/17/1997
• Est. Priority Date: 06/22/1993
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Maki, Yasuhito, Narabu, Tadakuni, Hirama, Masahide, Kawamoto, Seiichi
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/554,344
• Time in Patent Office: 589 Days
• Field of Search: 257/239, 257/221, 257/238, 377/59, 377/60, 377/61, 377/62, 377/63
• US Class Current: 257/239
• CPC Class Codes: H01L 29/42396 for charge coupled devices
• CPC Class Codes: H01L 29/76816 Output structures

Abstract

A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

Claims

1. A charge transfer device formed on a semiconductor substrate comprising:

charge transfer means formed on said semiconductor substrate for transferring charges,

a floating gate having a floating gate diffusion layer formed on said semiconductor substrate for accumulating the charges transferred from said charge transfer means,

output gate means formed between said charge transfer means and said floating gate on said semiconductor substrate, and

a charge detecting circuit electrically connected to said floating gate for outputting a voltage corresponding to the amount of the charges accumulated in said floating gate diffusion layer,

said output gate means having a first output gate region adjacent to said charge transfer means and a second output gate region adjacent to said floating gate diffusion layer, said first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, said second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a DC voltage being applied to said first output gate electrode, and an output voltage being applied to said second output gate electrode from said charge detecting circuit.

2. The charge transfer device as claimed in claim 1 further comprising:

a floating gate electrode formed on said floating gate diffusion layer with an insulating film therebetween, said floating gate electrode being connected to said charge detecting circuit.

3. The charge transfer device as claimed in claim 1 further comprising:

precharging means formed next to said floating gate diffusion layer for precharging said floating gate diffusion layer to a pre-set potential,

said second output gate electrode having an extension substantially covering a boundary region of said floating gate diffusion layer excluding a contact portion thereof with said precharging means.

4. The charge transfer device as claimed in claim 2 further comprising precharging means formed next to said floating gate diffusion layer for precharging said floating gate diffusion layer to a pre-set potential,

said second output gate electrode having an extension substantially covering a boundary region of said floating gate diffusion layer excluding a contact portion thereof with said precharging means, said extension being formed between said floating gate electrode and the floating gate diffusion layer.

5. The charge transfer device as claimed in claim 4 wherein the insulating layer between said floating gate electrode and the extension of said second output gate electrode are of a thickness larger than that of the insulating layer between said floating gate electrode and said floating gate diffusion layer.

6. A charge transfer device comprising:

charge transfer means for transferring charges,

a floating gate diffusion layer for accumulating the charges transferred from said charge transfer means,

a floating gate electrode formed on said floating gate diffusion layer with an insulating layer therebetween,

output gate means formed between said charge transfer means and said floating gate diffusion layer, said output gate means having a first output gate region adjacent to said charge transfer means and a second output gate region adjacent to said floating gate diffusion layer, said first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, said second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to said first output gate electrode,

charge detection means connected to said floating gate electrode for outputting a voltage corresponding to an amount of charges accumulated in said floating gate diffusion layer,

an output voltage being applied to said second output gate electrode from said charge detection means,

power source,

a switch connected between said power source and said floating gate electrode for controlling connection of said power source to the floating gate electrode,

means for draining charges accumulated in said floating gate diffusion layer, and

actuating means for activating draining of the charges accumulated in said floating gate diffusion layer during the time said switch connects said power source to said floating gate electrode.

7. A charge transfer device formed on a semiconductor substrate comprising:

charge transfer means formed on said semiconductor substrate for transferring charges,

a floating gate having a floating gate diffusion layer formed on said semiconductor substrate for accumulating the charges transferred from said charge transfer means,

a floating gate electrode formed on said floating gate diffusion layer with an insulating film therebetween,

charge detection means connected to said floating gate electrode for detecting charges accumulated in said floating gate diffusion layer,

precharge gate means formed next to said floating gate diffusion layer,

a precharge gate electrode formed on said precharge gate means with an insulating film therebetween, and

precharge drain means formed downstream of said precharge gate means,

said floating gate diffusion layer and the precharge gate means having different concentrations of impurities diffused therein such that, when voltages of the same level are applied to said floating gate electrode and said precharge gate electrode, the potential well of the floating gate diffusion layer becomes relatively shallower than the potential well of said precharge gate means allowing the charges accumulated in the floating gate diffusion layer to be transferred to the precharge gate means.

8. The charge transfer device as claimed in claim 7 wherein said semiconductor substrate comprises a semiconductor layer of a first conductivity type, said precharge gate means comprises a semiconductor layer of a second conductivity type, said floating gate diffusion layer comprises a semiconductor layer of the second conductivity type of a lower impurity concentration than said precharge gate means.

9. The charge transfer device as claimed in claim 7 wherein said floating gate electrode is constituted by an electrode layer at a higher height level than said precharge gate electrode.

10. The charge transfer device as claimed in claim 7 wherein said precharge gate means is so designed that it has a potential profile that becomes increasingly lower proceeding from said floating diffusion layer towards said precharge drain means.

11. The charge transfer device as claimed in claim 10 wherein said precharge gate means has a portion with a low impurity concentration positioned towards said floating gate diffusion layer and a portion with a high impurity concentration positioned towards said precharge drain means.

12. The charge transfer device as claimed in claim 10 wherein said precharge gate means has a width broader at the precharge drain than at the floating diffusion layer.