Top-drain trench based resurf DMOS transistor structure
First Claim
1. A high voltage power transistor, comprising:
- a source formed at a top surface of the transistor;
a drain formed at the top surface of the transistor;
a gate formed in a trench between the source and drain; and
a nonuniform dielectric lining in the trench having a thin portion adjacent the source and a thick portion adjacent the drain.
1 Assignment
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Accused Products
Abstract
A top drain trench based RESURF DMOS (reduced surface field double diffused MOS) transistor structure provides improved RDSon performance by minimizing transistor cell pitch. The transistor includes a gate, a source and drain. The trench may include a nonuniform dielectric lining. A drain drift region partially surrounds the trench. Current flows laterally enabling multiple trench based RESURF DMOS transistors to be formed on a single semiconductor die. The addition of an isolation region to electrically isolate the source from the substrate allows the power transistor to be incorporated into high side driver applications as well as other application mandating electrical isolation between the source and ground.
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Citations
7 Claims
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1. A high voltage power transistor, comprising:
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a source formed at a top surface of the transistor; a drain formed at the top surface of the transistor; a gate formed in a trench between the source and drain; and a nonuniform dielectric lining in the trench having a thin portion adjacent the source and a thick portion adjacent the drain. - View Dependent Claims (2)
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3. A high voltage power transistor, comprising:
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a substrate; a drift region formed in a top face of the substrate; a drain region formed in the drift region; a p-well region formed in the top face of the substrate; a source region formed in the p-well region; a trench formed in the top face of the substrate between the drift region and the p-well region such that the trench makes contact with both the drift region and the p-well region; a nonuniform dielectric lining in the trench having a thin portion adjacent the p-well region and a thick portion adjacent the drift region; and a gate formed within the trench. - View Dependent Claims (4, 5, 6, 7)
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Specification