High-current, high-voltage solid state switch

• US 5,640,293 A
• Filed: 11/10/1993
• Issued: 06/17/1997
• Est. Priority Date: 11/10/1993
• Status: Expired due to Fees

• Current Assignee: Ultra Electronics ICE, Inc. (Ultra Electronics Holdings PLC)
• Original Assignee: Ultra Electronics ICE, Inc. (Ultra Electronics Holdings PLC)
• Inventors: Vaughan, Arthur R., Dawes, William H.
• Primary Examiner(s): Gaffin, Jeffrey A.
• Assistant Examiner(s): Leja, Ronald W.
• Application Number:
  US08/149,765
• Time in Patent Office: 1,315 Days
• Field of Search: 361/676, 361/688, 361/690, 361/704, 361/709, 361/710, 361/713, 361/715, 361/717, 361/718, 361/722, 361/18, 361/42, 361/87, 361/93, 361/103, 361/100, 361/101, 361/57, 361/58
• US Class Current: 361/93.7
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches
• CPC Class Codes: H03K 17/122 in field-effect transistor switches
• CPC Class Codes: H03K 2017/0806 against excessive temperature

Abstract

A high-current, high-voltage solid state switch includes at least one solid state switching component connected to control circuitry configured into a single package. In the preferred embodiment, the switching component includes a power field effect transistor, and the control circuitry includes control logic, temperature sense and overcurrent circuits supported in an adjacent, coplanar relationship. Parallel coupled transistors are used for higher current embodiments.

Claims

1. An electrical switching apparatus comprising:

solid state switch means operable for selectively switching electrical current flow relative to the supply side of a load with the other side of the load being coupled with circuit ground; and

control circuit means electrically coupled with said switch means for controlling the operation thereof,

said switch means including a field effect transistor switchable between a conducting state and a nonconducting state,

said control circuit means including means for applying a gate voltage to said field effect transistor for switching thereof to said conducting state and means for rapidly coupling said circuit ground with the gate of said transistor for switching thereof from said conducting state to said nonconducting state in about 0.5 microseconds in order to prevent excessive power dissipation through said transistor during the transition from said conducting state to said nonconducting state.

2. The apparatus as set forth in claim 1, further including support means in the nature of a substrate supporting said switch means and said circuit means in an adjacent relationship with said switch means and circuit means together being substantially congruent with said support means, and further including means electrically isolating said switch means and said circuit means from one another and means thermally coupling said switch means and said circuit means with said support means.

3. The apparatus as set forth in claim 1, said switch means including a plurality of parallel coupled field effect transistors.

4. The apparatus as set forth in claim 1, said control circuit including an overcurrent sense circuit having means for switching off said switch means in the event of excessive current flow.

5. The apparatus as set forth in claim 1, said control circuit including a temperature sensor positioned adjacent said switch means and coupled in a thermal relationship therewith for sensing the temperature thereof and including means for producing a voltage signal representative of said switch means temperature, said control circuit further including a temperature sense circuit electrically coupled with said temperature sensor and responsive to said voltage signal for switching off said switch means in the event of a predetermined excessive temperature thereof.

6. The apparatus as set forth in claim 1, said control circuit means including a charge pump for providing a control signal to said switch means at a voltage higher than supply voltage supplied to said circuit means.

7. The apparatus as set forth in claim 1, said circuit means including

fault sensing means for sensing a fault in the operation of said apparatus and for producing a fault signal on a fault line representative of a fault, and

fault responsive means responsive to said fault signal on said fault line for switching off said current flow, said current flow producing a changing magnetic field when said switch means is switching on said current flow and said fault line being subject to inducement of a transient signal in response to said changing magnetic field,

said circuit means further including a circuit ground line positioned closely adjacent said fault line for minimizing said transient signal sufficiently to prevent a transient reduced fault signal.

8. The apparatus as set forth in claim 1, said switch means including means for switching at least five amperes of current at 400 volts.

9. The apparatus as set forth in claim 8, said switch means including means for switching 100 amperes of current at 400 volts.

10. The apparatus as set forth in claim 9, said switch means and control circuit means cooperatively presenting means for switching on said 100 amperes of current in about 20 microseconds.

11. The apparatus as set forth in claim 10, said switch means and control circuit means cooperatively presenting means for switching off said 100 amperes of current in about one-half microsecond.

12. The apparatus as set forth in claim 8, said switch means and control circuit means cooperatively presenting means for switching on said current in less than about 20 microseconds.

13. An electrical switching apparatus comprising:

solid state switch means operable for selectively switching electrical current flow relative to the supply side of a load with the other side of the load being coupled with circuit ground; and

control circuit means electrically coupled with said switch means for controlling the operation thereof,

fault sensing means for sensing a fault in the operation of said apparatus and for producing a fault signal on a fault line representative of a fault, and

fault responsive means responsive to said fault signal on said fault line for switching off said current flow, said current flow producing a changing magnetic field when said switch means is switching on said current flow and said fault line being subject to inducement of a transient signal in response to said changing magnetic field,

said circuit means further including a circuit ground line positioned closely adjacent said fault line for minimizing said transient signal sufficiently to prevent a transient induced fault signal.

14. The apparatus as set forth in claim 13, said switch means including a field effect transistor.

15. The apparatus as set forth in claim 13, said switch means including a plurality of parallel-coupled field effect transistors.

16. The apparatus as set forth in claim 13, said circuit means including means for sensing an overcurrent condition through said switch means and responsive to said condition turning off said switch means.

17. The apparatus as set forth in claim 13, said circuit means including means for sensing an over temperature condition of said switch means and responsive to said condition turning off said switch means.

18. The apparatus as set forth in claim 13,

said switch means including a field effect transistor switchable between a conducting state and a nonconducting state,

said control circuit means including means for applying a gate voltage to said field effect transistor for switching thereof to said conducting state and means for rapidly coupling said circuit ground with the gate of said transistor for switching thereof from said conducting state to said nonconducting state in about 0.5 microseconds in order to prevent excessive power dissipation through said transistor during the transition from said conducting state to said nonconducting state.