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Structure for cross coupled thin film transistors and static random access memory cell

  • US 5,640,342 A
  • Filed: 11/20/1995
  • Issued: 06/17/1997
  • Est. Priority Date: 11/20/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a. a first thin film transistor having a first gate formed in a first polysilicon layer and first source, drain and channel regions formed in a second polysilicon layer, the second polysilicon layer being disposed over and adjacent to the first polysilicon layer;

    b. a second thin film transistor having a second gate formed in the second polysilicon layer and second source, drain, and channel regions formed in the first polysilicon layer; and

    c. a dielectric layer interposed between the first and second polysilicon layers.

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