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Porous silicon photo-device capable of photoelectric conversion

  • US 5,644,156 A
  • Filed: 04/12/1995
  • Issued: 07/01/1997
  • Est. Priority Date: 04/14/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a porous silicon layer made from single crystalline silicon as a base with an impurity concentration of 1×

    1019 to 1×

    1021 cm-3, in which a plurality of pores are formed; and

    a thermal oxide film of 0.01 to 10 μ

    m thickness, formed on expanded surfaces of said porous silicon layer, said expanded surfaces including internal surfaces of said pores.

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