Three-wire-line vertical interconnect structure for multilevel substrates

• US 5,644,277 A
• Filed: 11/06/1995
• Issued: 07/01/1997
• Est. Priority Date: 02/27/1995
• Status: Expired due to Term

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Wooldridge, John J., Gulick, Jon J.
• Primary Examiner(s): GENSLER, PAUL L
• Application Number:
  US08/553,946
• Time in Patent Office: 603 Days
• Field of Search: 333/33, 333/238, 333/246, 333/247, 361/735, 361/744, 361/778, 361/785, 361/789, 361/790, 439/930
• US Class Current: 333/246
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2223/6627 Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/10329 Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/15173 in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/1903 including wave guides
• CPC Class Codes: H01L 2924/19033 being a coplanar line type
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A vertical interconnect structure comprising a three-wire-line transmission line structure for providing electrical continuity between different levels of a multilevel substrate. The present invention provides a means for transferring power between various levels of the substrate without introducing excessive additional RE losses. First and second coplanar transmission line structures are disposed on first and second surfaces of the substrate. A vertical interconnect structure is disposed in the multilevel RF substrate and is coupled between the first and second transmission line structures. The vertical interconnect structure comprises three conductors having predetermined cross-sectional dimensions and predetermined separations therebetween that are adapted to transfer RE power between the first and second transmission line structures. In a completed electronic circuit employing the present invention, an electronic device is electrically coupled between two coplanar transmission line structures disposed on one surface of the substrate, and the vertical interconnect structure couples power to the electronic circuit by way of the coplanar transmission line structure disposed another surface of the substrate. The impedance of the vertical interconnect structure is determined by the relative dimensions of the three conductors and their relative separations. The three-wire-line transmission line structure supports a highly desirable TEM mode of energy propagation. The present invention is relatively easy to fabricate, in that vertical wires having a circular geometry are easily accommodated as part of the fabrication process for the substrate. The present invention provides for relatively low loss, because of the nature of the currents that flow on the conductors. The propagation characteristics are well-understood, and the vertical interconnect structure supports a highly desirable TEM mode of energy propagation.

Claims

1. A stacked multilevel substrate module comprising:

an enclosure having a plurality of openings that permit electrical connection to external circuits;

lower, center, and upper substrates stacked within the enclosure each comprising an electronic circuit having plurality of coplanar conductors disposed on upper and lower surfaces thereof that are used to transmit and receive electrical signals, and wherein the center substrate comprises a plurality of three wire vertical interconnect structures that extend through peripheral edges thereof

lower and upper ring frames interposed between the respective substrates each comprising a plurality of solderless interconnects disposed therethrough, and wherein predetermined ones of the solderless interconnects contact predetermined ones of the three wire vertical interconnect structures of the center substrate; and

a plurality of alignment pins disposed through alignment holes disposed through the substrates and ring frames.

2. The stacked multilevel substrate module of claim 1 wherein the center substrate comprises:

a multilevel RF substrate comprising a relatively homogeneous dielectric material;

first and second coplanar transmission line structures respectively disposed on first and second surfaces of the multilevel RF substrate; and

a vertical interconnect structure disposed in the multilevel RF substrate that is coupled between the first and second coplanar transmission line structures, and which comprises three conductors having predetermined cross-sectional dimensions and predetermined separations therebetween for transferring RF power between the respective coplanar transmission line structures disposed on the multilevel RF substrate, and wherein the impedance of the vertical interconnect structure is determined by the relative dimensions of the three conductors and their relative separations.

3. The stacked multilevel substrate module of claim 2 wherein the dielectric material is comprised of aluminum nitride.

4. The stacked multilevel substrate module of claim 1 wherein the enclosure comprises:

a housing;

a lower seal ring having a plurality of openings therein that permit electrical connection of the module to external circuits, and a thermal gasket that seals the housing at a lower end thereof; and

an upper seal ring having a plurality of openings therein that permit electrical connection of the module to external circuits, and a thermal gasket that seals the housing at an upper end thereof.

5. The stacked multilevel substrate module of claim 4 wherein each vertical interconnect structure supports transmission of a transverse electromagnetic (TEM) wave.

6. The stacked multilevel substrate module of claim 4 wherein the lower and upper seal rings comprise iron nickel alloy material.

7. The stacked multilevel substrate module of claim 4 wherein the lower and upper seal rings are seam sealed to the housing.

8. The stacked multilevel substrate module of claim 4 wherein the lower, center, and upper substrates comprise multilayer aluminum nitride printed circuits.

9. The stacked multilevel substrate module of claim 4 wherein the lower and upper ring frames comprise aluminum.

10. The stacked multilevel substrate module of claim 4 wherein the plurality of solderless interconnects comprise fuzzax.

11. The stacked multilevel substrate module of claim 4 wherein the plurality of solderless interconnects comprise fuzz buttons.

12. The stacked multilevel substrate module of claim 4 wherein the lower and upper ring frames are open at their centers, and have support ribs disposed across the openings.

13. The stacked multilevel substrate module of claim 12 wherein the conductors have a circular cross-section.

14. The stacked multilevel substrate module of claim 12 wherein the conductors are comprised of tungsten.

15. The stacked multilevel substrate module of claim 12 wherein the conductors are comprised of molybdenum.

16. The stacked multilevel substrate module of claim 4 wherein the plurality of three wire vertical interconnect structures extend through peripheral edges of the center substrate and contact selected ones of the solderless interconnects disposed through the lower and upper ring frames.