Plasma processing apparatus

• US 5,645,644 A
• Filed: 10/20/1995
• Issued: 07/08/1997
• Est. Priority Date: 10/20/1995
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Sumitomo Metal Industries Limited (Nippon Steel Corporation)
• Inventors: Miyamura, Tadashi, Mabuchi, Hiroshi, Yoshiki, Takahiro, Komachi, Kyoichi
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): CHANG, JONI YUK YING
• Application Number:
  US08/546,342
• Time in Patent Office: 627 Days
• Field of Search: 118/723 MW, 118/723 ME, 118/723 MA, 118/723 MR, 118/723 MP, 156/345, 204/298.38
• US Class Current: 118/723.0MW
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32238 Windows

Abstract

A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.

Claims

1. A plasma processing apparatus comprising:

means of supplying a microwave;

a reaction chamber having a microwave lead-in opening, with a sample stage being disposed inside said chamber;

a microwave window for introducing the microwave provided by said microwave supply means into said reaction chamber through said microwave lead-in opening; and

a supporting member having beams for supporting said microwave window.

2. A plasma processing apparatus according to claim 1, wherein said microwave window is divided in correspondence to areas of said supporting member divided by said beams.

3. A plasma processing apparatus according to claim 1 further including means of supplying gas from said beams into said reaction chamber.

4. A plasma processing apparatus comprising:

means of supplying a microwave;

a dielectric sheet which the microwave provided by said microwave supply means is directed into and propagates in;

a reaction chamber having a microwave lead-in opening, with a sample stage being disposed inside said chamber;

a microwave window disposed to confront said dielectric sheet for introducing the microwave propagating in said dielectric sheet into said reaction chamber through said microwave lead-in opening; and

a supporting member having beams for supporting said microwave window.

5. A plasma processing apparatus according to claim 4, wherein said microwave window is divided in correspondence to areas of said supporting member divided by said beams.

6. A plasma processing apparatus according to claim 4 further including means of supplying gas from said beams into said reaction chamber.

7. A plasma processing apparatus according to claim 4, wherein said beams of supporting member are arranged such that slit-shaped openings formed by said beams of said supporting member have a length of shorter side greater than or equal to 1/6 of the wavelength of the microwave and smaller than or equal to the microwave wavelength and align at a spacing smaller than or equal to the microwave wavelength.